Tunnel field-effect transistors in 2-D transition metal dichalcogenide materials
H Ilatikhameneh, Y Tan, B Novakovic… - IEEE Journal on …, 2015 - ieeexplore.ieee.org
In this paper, the performance of tunnel field-effect transistors (TFETs) based on 2-D
transition metal dichalcogenide (TMD) materials is investigated by atomistic quantum …
transition metal dichalcogenide (TMD) materials is investigated by atomistic quantum …
Dielectric engineered tunnel field-effect transistor
The dielectric engineered tunnel field-effect transistor (DE-TFET) as a high-performance
steep transistor is proposed. In this device, a combination of high-k and low-k dielectrics …
steep transistor is proposed. In this device, a combination of high-k and low-k dielectrics …
Saving Moore's law down to 1 nm channels with anisotropic effective mass
Scaling transistors' dimensions has been the thrust for the semiconductor industry in the last
four decades. However, scaling channel lengths beyond 10 nm has become exceptionally …
four decades. However, scaling channel lengths beyond 10 nm has become exceptionally …
Optimum high-k oxide for the best performance of ultra-scaled double-gate MOSFETs
M Salmani-Jelodar, H Ilatikhameneh… - IEEE Transactions …, 2016 - ieeexplore.ieee.org
A widely used technique to mitigate gate leakage in ultrascaled metal oxide semiconductor
field effect transistors (mosfets) is the use of high-k dielectrics, which provide the same …
field effect transistors (mosfets) is the use of high-k dielectrics, which provide the same …
Dramatic impact of dimensionality on the electrostatics of PN junctions and its sensing and switching applications
Low-dimensional material systems provide a unique set of properties useful for solid-state
devices. The building block of these devices is the pn junction. In this paper, we present a …
devices. The building block of these devices is the pn junction. In this paper, we present a …
Minimizing self-heating and heat dissipation in ultrascaled nanowire transistors
R Rhyner, M Luisier - Nano letters, 2016 - ACS Publications
Through advanced electro-thermal simulations we demonstrate that self-heating effects play
a significant role in ultrascaled nanowire field-effect transistors, that some crystal …
a significant role in ultrascaled nanowire field-effect transistors, that some crystal …
Configurable electrostatically doped high performance bilayer graphene tunnel FET
A bilayer graphene-based electrostatically doped tunnel field-effect transistor (BED-TFET) is
proposed. Unlike graphene nanoribbon TFETs in which the edge states deteriorate the OFF …
proposed. Unlike graphene nanoribbon TFETs in which the edge states deteriorate the OFF …
Scaling theory of electrically doped 2D transistors
H Ilatikhameneh, G Klimeck… - IEEE Electron …, 2015 - ieeexplore.ieee.org
In this letter, it is shown that the existing scaling theories for chemically doped transistors
cannot be applied to the novel class of electrically doped 2D transistors and the concept of …
cannot be applied to the novel class of electrically doped 2D transistors and the concept of …
From Fowler–Nordheim to nonequilibrium Green's function modeling of tunneling
H Ilatikhameneh, RB Salazar, G Klimeck… - … on Electron Devices, 2016 - ieeexplore.ieee.org
In this paper, an analytic model is proposed, which provides, in a continuous manner, the
current–voltage (–) characteristic of high-performance tunneling FETs (TFETs) based on …
current–voltage (–) characteristic of high-performance tunneling FETs (TFETs) based on …
Can homojunction tunnel FETs scale below 10 nm?
H Ilatikhameneh, G Klimeck… - IEEE Electron Device …, 2015 - ieeexplore.ieee.org
The main promise of tunnel FETs (TFETs) is to enable supply voltage (V DD) scaling in
conjunction with dimension scaling of transistors to reduce power consumption. However …
conjunction with dimension scaling of transistors to reduce power consumption. However …