Modifications of optical, structural, chemical and morphological properties of molybdenum disulfide (MoS2) sputtered thin films under high dose gamma radiation
Molybdenum disulfide (MoS 2) is considered to be a promising member of Transition metal
dichalcogenides (TMDCs) displays significant physical and chemical peculiarities that make …
dichalcogenides (TMDCs) displays significant physical and chemical peculiarities that make …
[HTML][HTML] Localized strain relaxation effect on gamma irradiated AlGaN/GaN high electron mobility transistors
Strain localization in microelectronic devices commonly arises from device geometry,
materials, and fabrication processing. In this study, we controllably relieve the local strain …
materials, and fabrication processing. In this study, we controllably relieve the local strain …
Effects of gamma irradiation on non-polar GaN films deposited on sapphire using pulsed laser deposition
T Rajgoli, T Sant, SM Jejurikar, S Hinge… - Applied Surface …, 2024 - Elsevier
The GaN films/layers exposed to γ-radiations is known to harvest defects and vacancies in
the crystals producing donor, acceptor and recombination centers within the bandgap …
the crystals producing donor, acceptor and recombination centers within the bandgap …
Impact of gamma-ray irradiation on photo emission from InGaN/GaN LED
H Li, Y Lu, T Zhu, R Cao, Y Xue, X Zeng - Microelectronics Reliability, 2023 - Elsevier
The impact of gamma-irradiation on the unpacked InGaN/GaN LED properties has been
studied. Before gamma irradiation exposure, three peaks located at 400, 447 and 568 nm …
studied. Before gamma irradiation exposure, three peaks located at 400, 447 and 568 nm …
Effect of gamma-irradiation on structural, morphological, and optical properties of β-Ga2O3 single crystals
KV Akshita, D Dhanabalan, R Hariharan… - Journal of Materials …, 2023 - Springer
Gallium oxide (β-Ga2O3) single crystals were grown using the optical floating zone (OFZ)
technique. Compressed dry air was used as growth atmosphere. Several wafers of 1 mm …
technique. Compressed dry air was used as growth atmosphere. Several wafers of 1 mm …
Crystal Quality Enhancement of Semi-Polar (11-22) InGaN/GaN-Based Led Grown on M-Plane Sapphire Substrate Via MOCVD
OA Fadhil - 2019 - search.proquest.com
Gallium nitride (GaN) thin films grown along c-plane (polar) direction are extensively
employed for III-nitride based LEDs. However, the wurtzite crystal structure of LEDs grown …
employed for III-nitride based LEDs. However, the wurtzite crystal structure of LEDs grown …
Crystal quality enhancement of semi-polar (11 22) InGaN/GaN-based LED grown on M-Plane sapphire substrate via MOCVD/Omar Ayad Fadhil
F Omar Ayad - 2019 - studentsrepo.um.edu.my
Gallium nitride (GaN) thin films grown along c-plane (polar) direction are extensively
employed for III-nitride based LEDs. However, the wurtzite crystal structure of LEDs grown …
employed for III-nitride based LEDs. However, the wurtzite crystal structure of LEDs grown …