Indium oxide—a transparent, wide-band gap semiconductor for (opto) electronic applications

O Bierwagen - Semiconductor Science and Technology, 2015 - iopscience.iop.org
The present review takes a semiconductor physics perspective to summarize the state-of-the
art of In 2 O 3 in relation to applications. After discussing conventional and novel …

Oxygen vacancies induced room temperature ferromagnetism and enhanced dielectric properties in Co and Mn co-doped ZnO nanoparticles

Zulfiqar, M Zubair, A Khan, T Hua, N Ilyas… - Journal of Materials …, 2021 - Springer
We investigated the influence of oxygen vacancies (varying) on the structure and properties
(dielectric and magnetic) of Co (fixed) and Mn (varied) co-doped ZnO nanoparticles (NPs) …

[HTML][HTML] Role of bound magnetic polaron model in Sm doped ZnO: evidence from magnetic and electronic structures

P Kaur, S Chalotra, H Kaur, A Kandasami… - Applied Surface Science …, 2021 - Elsevier
In the present study, the role of the Bound Magnetic Polaron (BMP) model is understood in
Sm-doped ZnO nanoparticles synthesized via a facile co-precipitation method based on the …

High Curie Temperature Ferromagnetism and High Hole Mobility in Tensile Strained Mn‐Doped SiGe Thin Films

H Wang, S Sun, J Lu, J Xu, X Lv, Y Peng… - Advanced Functional …, 2020 - Wiley Online Library
Diluted magnetic semiconductors based on group‐IV materials are desirable for spintronic
devices compatible with current silicon technology. In this work, amorphous Mn‐doped SiGe …

Adjacent Fe-Vacancy Interactions as the Origin of Room Temperature Ferromagnetism in

RJ Green, TZ Regier, B Leedahl, JA McLeod, XH Xu… - Physical review …, 2015 - APS
Dilute magnetic semiconductors (DMSs) show great promise for applications in spin-based
electronics, but in most cases continue to elude explanations of their magnetic behavior …

[HTML][HTML] Regulated the ferromagnetism of In2O3 quantum dots by non-stoichiometry compositions

H Wang, Z Zhou, J Zhao, F Du, P Jia - Results in Physics, 2023 - Elsevier
Due to different versions of ferromagnetic origin, the magnetic properties of oxide diluted
magnetic semiconductor (ODMS) cannot be accurately determined. We have systematically …

d-electron-dependent transparent conducting oxide of V-doped ZnO thin films

FX Jiang, RX Tong, Z Yan, LF Ji, XH Xu - Journal of Alloys and Compounds, 2020 - Elsevier
Transparent conducting oxides (TCOs) have garnered considerable attention because of
their promising potential use in optoelectronic devices. The conductivity of conventional …

V-doped ZnO diluted magnetic semiconductor prepared by chemical spray pyrolysis

MM Gomaa, MH Sayed, E Chikoidze, Y Dumont… - Materials Science in …, 2020 - Elsevier
Chemical spray pyrolysis is utilized to deposit ZnO thin films with varied vanadium (V)
contents, offering a simple, low cost and large-scale production deposition process. The …

Enhanced room temperature magnetoresistance and spin injection from metallic cobalt in Co/ZnO and Co/ZnAlO films

Z Quan, X Zhang, W Liu, X Li, K Addison… - … Applied Materials & …, 2013 - ACS Publications
Co/ZnO and Co/ZnAlO films were prepared by depositing ultrathin cobalt layers and
semiconductor layers on glass substrates at room temperature. The films consist of metallic …

Ab Initio Study of the Ferromagnetic Response, Local Structure, and Hyperfine Properties of Fe-Doped SnO2

AM Mudarra Navarro… - The Journal of …, 2015 - ACS Publications
We present here an ab initio study of the structural, magnetic, and hyperfine properties of Fe-
doped rutile SnO2 for different concentrations and distributions of the Fe atoms and oxygen …