Monolithic multi‐color light‐emitting diodes (LEDs) offer numerous advantages as multi‐
functional lighting sources. However, the achievement of full‐color monolithic LEDs …

Polarized optical emission has been widely reported in semi-polar emitters as a result of the
separation of the topmost valance bands. Simultaneously, semi-polar emitters exhibit …

This paper presents the effect of ammonia partial pressure at a relatively low fixed V/III (∼
765) growth atmosphere on the growth of multi-quantum well (MQW) structures and the light …

Recently, III-nitride semiconductors have gained immense attention for application in high-
performance optoelectronic devices. However, in the device fabrication process, it is …

Cathodoluminescence is a powerful technique for the characterization of semiconductors.
Due to its high spatial resolution, it is emerging as a suitable method for the study of …

Pushing the emission wavelength of efficient ultraviolet (UV) emitters further into the deep-
UV requires material with high crystal quality, while also reducing the detrimental effects of …

We have demonstrated the control of arrowhead-like surface structures in a semipolar (11-
22) GaN film grown on a patterned sapphire substrate (PSS). The PSS can reduce the …

Red, green, and blue electroluminescence (EL) in semipolar (11‐22) GaN‐based light‐
emitting diodes (LEDs) is achieved using SiO2 hexagonal patterns epitaxial lateral …

Light-emitting diodes (LEDs) based on group III-nitride semiconductors (GaN, AlN, and InN)
are crucial elements for solid-state lighting and visible light communication applications. The …

Superfluorescence is a collective emission from quantum coherent emitters due to quantum
fluctuations. This is characterized by the existence of the delay time (τ D) for the emitters …