Monolithic integration of III-V semiconductor devices on Silicon (Si) has long been of great
interest in photonic integrated circuits (PICs), as well as traditional integrated circuits (ICs) …

III/V semiconductors with cubic zinc-blende crystal structure, for example GaAs, GaP or InP,
become metastable if atoms with significantly smaller or larger covalent radius than the …

Quaternary III–V semiconductors are one of the most promising material classes in
optoelectronics. The bandgap and its character, direct or indirect, are the most important …

Progress in monolithic integration of III-V semiconductor heterostructures on silicon
promotes the development of silicon-based integrated optoelectronics. Here, we report on …

Quantum-well intermixing (QWI) technology is commonly considered as an effective
methodology to tune the post-growth bandgap energy of semiconductor composites for …

This paper summarises results of the epitaxial growth of Ga (NAsBi) by metal–organic
vapour phase epitaxy (MOVPE) and the subsequent optical and structural characterisations …

The modification of the nature and size of bandgaps for III-V semiconductors is of strong
interest for optoelectronic applications. Strain can be used to systematically tune the …

We study the origin and formation of antiphase domains (APDs) and related defects in 7 nm
thin, lattice-matched GaP buffer layers deposited by metal–organic chemical vapor …

The desire to access new alloys with desirable properties for semiconductor devices has
moved the field of semiconductor epitaxial growth into the region of metastable alloys, ie …

Tuning the band gap in ternary III-V semiconductors via modification of the composition or
the strain in the material is a major approach for the design of optoelectronic materials …