It is difficult to meet all the different material and economical requirements posed to a MEMS
structural layer that can be integrated with the electronics on the same substrate using a …

A new fabrication methodology that allows self-alignment of a micromechanical structure to
its anchor (s) has been used to achieve vibrating radial-contour mode polysilicon …

Thermal budget limits for low stand-by power (LSP), 0.25/spl mu/m foundry CMOS devices
have been investigated, in order to assess the impact of post-processing …

Sensing systems-on-chip (SSoCs), combining micromachined sensing structures and
microelectronic building blocks on a single chip, are reviewed. While single-chip pressure …

We demonstrate for the first time the embedded integration of a Radio Frequency
Microelectromechanical Systems (RF-MEMS) capacitive switch for mm-wave integrated …

An RF-MEMS capacitive switch for mm-wave integrated circuits, embedded in the BEOL of
0.25¿ m BiCMOS process, has been characterized. First, a mechanical model based on …

In this paper, we demonstrate eliminating the stress gradient in polycrystalline silicon
germanium films at temperatures compatible with standard CMOS (Al interconnects) …

In this overview article several MEMS applications of poly-SiGe are discussed: thermal
applications, the application as a capping layer for MEMS wafer-level packaging and the …

Integrated 10/spl mu/m thick poly-SiGe gyroscopes are processed on top of an 8" standard
0.35/spl mu/m CMOS wafer with 5 metal levels by using an advanced plasma-enhanced …

This paper describes two novel processes for depositing poly-SiGe films at CMOS-
compatible temperatures (/spl les/450/spl deg/C). A range of deposition temperatures is …