Spintronics is one of the emerging fields for the next-generation nanoelectronic devices to
reduce their power consumption and to increase their memory and processing capabilities …

Heusler alloys are theoretically predicted to become half-metals at room temperature (RT).
The advantages of using these alloys are good lattice matching with major substrates, high …

Noncollinear antiferromagnetic (AFM) materials have drawn research interest because they
exhibit large anomalous Hall effect at room temperature (RT) due to large Berry curvature …

Antiferromagnets and altermagnets, with robustness, scalability and topological properties,
emerge as promising contenders for next-generation spintronics, quantum and terahertz …

The Mn 3 Ga material is a promising candidate for memory and computing devices owing to
its rich crystalline structures of tunable ferrimagnetic and collinear and non-collinear …

Abstract Ni-substituted Mn 3 Ga displays a weak ferromagnetism embedded in an
antiferromagnetic (AF) phase. Upon field cooling, the alloy exhibits exchange bias and an …

Distorted Heusler compound of D0 19 Mn 3 Ge polycrystalline films were studied in terms of
their crystalline structures and antiferromagnetic behavior by varying annealing temperature …

We report the observation of large exchange bias effect in hexagonal Mn 3 Ga melt-spun
ribbons with triangular antiferromagnetic order. The observation shows that the maximum …

Abstract Fe-doped D0 19 Mn 3 Ga films were studied in terms of both their in-plane and
perpendicular exchange bias field, H ex, induced in the attached ferromagnetic layer. The …

The antiferromagnetic L1 0 θ-NiMn compound has a Néel temperature of up to 800° C and
is capable of providing the exchange bias effect in multilayered structures with adjacent …