Opto-electronic memristors: Prospects and challenges in neuromorphic computing
Memristive-based electro-optical neuromorphic hardware takes advantage of both the high-
density of electronic circuits and the high bandwidth of their photonic counterparts, thus …
density of electronic circuits and the high bandwidth of their photonic counterparts, thus …
Picosecond Time‐Scale Resistive Switching Monitored in Real‐Time
The resistance state of filamentary memristors can be tuned by relocating only a few atoms
at interatomic distances in the active region of a conducting filament. Thereby the technology …
at interatomic distances in the active region of a conducting filament. Thereby the technology …
Ultra compact electrochemical metallization cells offering reproducible atomic scale memristive switching
Here we show electrochemical metallization cells with compact dimensions, excellent
electrical performance, and reproducible characteristics. An advanced technology platform …
electrical performance, and reproducible characteristics. An advanced technology platform …
Volatile resistive switching memory based on Ag ion drift/diffusion—Part II: Compact modeling
Resistive-switching random access memory (RRAM) based on Cu or Ag filament is a
promising selector device for high-density crosspoint arrays. These devices display high ON …
promising selector device for high-density crosspoint arrays. These devices display high ON …
Atomic scale photodetection enabled by a memristive junction
The optical control of atomic relocations in a metallic quantum point contact is of great
interest because it addresses the fundamental limit of “CMOS scaling”. Here, by developing …
interest because it addresses the fundamental limit of “CMOS scaling”. Here, by developing …
Scalable Al2O3–TiO2 Conductive Oxide Interfaces as Defect Reservoirs for Resistive Switching Devices
Resistive switching devices herald a transformative technology for memory and
computation, offering considerable advantages in performance and energy efficiency. Here …
computation, offering considerable advantages in performance and energy efficiency. Here …
A physics-based compact model for CBRAM retention behaviors based on atom transport dynamics and percolation theory
A physics-based compact model for retention behaviors of conductive-bridge random
access memory (CBRAM) is developed by modeling: 1) the material-dependent metal atom …
access memory (CBRAM) is developed by modeling: 1) the material-dependent metal atom …
Electrode dependence of resistive switching characteristics in copper (II) oxide memory devices
CC Hsu, YS Lin - Semiconductor Science and Technology, 2019 - iopscience.iop.org
In this paper, resistive switching (RS) characteristics of copper (II) oxide (CuO) memory
devices with top electrodes of Ag and Al were studied. When using Ag as the top electrode …
devices with top electrodes of Ag and Al were studied. When using Ag as the top electrode …
Ab initio quantum transport in conductive bridging random access memory
F Ducry - 2021 - research-collection.ethz.ch
In line with the growing popularity of data-driven IT applications, the importance of data
storage and memory has not stopped increasing during the last decade. However, the …
storage and memory has not stopped increasing during the last decade. However, the …