A comprehensive modeling framework for gate stack process dependence of DC and AC NBTI in SiON and HKMG p-MOSFETs
A comprehensive modeling framework involving mutually uncorrelated contribution from
interface trap generation and hole trapping in pre-existing, process related gate insulator …
interface trap generation and hole trapping in pre-existing, process related gate insulator …
Superior NBTI in High- SiGe Transistors–Part I: Experimental
SiGe quantum-well pMOSFETs have recently been introduced for enhanced performance of
transistors. Quite surprisingly, a significant reduction in negative bias temperature instability …
transistors. Quite surprisingly, a significant reduction in negative bias temperature instability …
High-throughput on-chip large deformation of silicon nanoribbons and nanowires
An on-chip internal stress-based testing device has been developed in order to deform
silicon nanoribbons and nanowires up to large strains enabling high throughput of data. The …
silicon nanoribbons and nanowires up to large strains enabling high throughput of data. The …
SiGe composition and thickness effects on NBTI in replacement metal gate/high-κ technologies
P Srinivasan, J Fronheiser, K Akarvardar… - 2014 IEEE …, 2014 - ieeexplore.ieee.org
The dependence of NBTI on SiGe thickness and composition for epitaxially grown layers on
(100) and (110) Si substrates is studied in detail. It is found that SiGe thickness has no …
(100) and (110) Si substrates is studied in detail. It is found that SiGe thickness has no …
A novel deep submicron SiGe-on-insulator (SGOI) MOSFET with modified channel band energy for electrical performance improvement
In this paper, we present the unique features exhibited by a novel nanoscale SiGe-on-
insulator metal-oxide-semiconductor field-effect transistor (MOSFET) with modified channel …
insulator metal-oxide-semiconductor field-effect transistor (MOSFET) with modified channel …
Superior NBTI in high-k SiGe transistors–part II: Theory
The susceptibility of conventional silicon p-channel MOS transistors to negative bias
temperature instabilities (NBTIs) is a serious threat to further device scaling. One possible …
temperature instabilities (NBTIs) is a serious threat to further device scaling. One possible …
Nanoscale SiGe-on-insulator (SGOI) MOSFET with graded doping channel for improving leakage current and hot-carrier degradation
M Rahimian, AA Orouji - Superlattices and Microstructures, 2011 - Elsevier
A novel graded doping profile, for the first time is introduced for reliability improvement and
leakage current reduction. The proposed structure is called graded doping channel SiGe-on …
leakage current reduction. The proposed structure is called graded doping channel SiGe-on …
Characterization and analysis of random telegraph noise in scaled SiGe channel HKMG pMOSFETs
CLN Pavan, R Divakaruni… - IEEE Transactions on …, 2021 - ieeexplore.ieee.org
Here for the first time, we report on the characterization and analysis of random telegraph
noise (RTN) in silicon-germanium (SiGe) channel pMOSFETs without a silicon-cap layer. A …
noise (RTN) in silicon-germanium (SiGe) channel pMOSFETs without a silicon-cap layer. A …
A detailed study of gate insulator process dependence of NBTI using a compact model
Process impact of negative bias temperature instability (NBTI) is studied in silicon oxynitride
(SiON) and high-k metal gate (HKMG) p-MOSFETs. An analytical compact model is used to …
(SiON) and high-k metal gate (HKMG) p-MOSFETs. An analytical compact model is used to …
Nanoscale evidence for the superior reliability of SiGe high-k pMOSFETs
It is commonly accepted that the susceptibility of conventional Si channel pMOSFETs to the
negative bias temperature instability (NBTI) is a serious threat to further scaling. One …
negative bias temperature instability (NBTI) is a serious threat to further scaling. One …