A topological insulator protected by time-reversal symmetry is realized via spin–orbit
interaction-driven band inversion. The topological phase in the Bi1− x Sb x system is due to …

This book is concerned with compound semiconductor bulk materials and has been written
for students, researchers and engineers in material science and device fabrication. It offers …

Lead telluride crystals have been grown for the first time by the cold traveling heater method.
The structural properties of the crystals have been studied by neutron diffraction, and rocking …

Growth of high-quality Tl-doped p-type PbTe single crystals by Bridgman method under
controlled Te or Pb vapor pressure has been investigated. For high concentration of Tl in the …

This paper reports the investigations of the sputtering process of (111) oriented single
crystals of PbTe with excess tellurium (4 at.%) in RF high-density low-pressure inductively …

Single crystal of PbTe is grown by the simple vertical Bridgman method by using high purity
Pb and Te as source materials. Cone angle of the ampoule is optimized to obtain a preferred …

Plumbonacrite [Pb 10 (CO 3) 6 O (OH) 60] is a versatile material, which can be deposited by
a simple solution process and transformed into lead chalcogenides by thermal substitution …

Pb1− xSnxTe (x≈ 0.12) liquid-phase epitaxial layers have been grown by the temperature
difference method under controlled vapor pressure (TDM–CVP) using Pb solvents on PbTe …

Abstract Effects of Bi doping in PbTe liquid-phase epitaxial layers grown by the temperature
difference method under controlled vapor pressure (TDM-CVP) are investigated. For Bi …

The pn junction characteristics of the PbTe epitaxial layers grown on PbTe substrates are
investigated. Both the substrate crystals and the epitaxial layers are grown under controll Te …