Review of performance metrics of spin qubits in gated semiconducting nanostructures

P Stano, D Loss - Nature Reviews Physics, 2022 - nature.com
Abstract This Technical Review collects values of selected performance characteristics of
semiconductor spin qubits defined in electrically controlled nanostructures. The …

Electrical control of uniformity in quantum dot devices

M Meyer, C Déprez, TR van Abswoude, IN Meijer… - Nano Letters, 2023 - ACS Publications
Highly uniform quantum systems are essential for the practical implementation of scalable
quantum processors. While quantum dot spin qubits based on semiconductor technology …

Crosstalk analysis for single-qubit and two-qubit gates in spin qubit arrays

I Heinz, G Burkard - Physical Review B, 2021 - APS
Scaling up spin qubit systems requires high-fidelity single-qubit and two-qubit gates. Gate
fidelities exceeding 98% were already demonstrated in silicon-based single and double …

How valley-orbit states in silicon quantum dots probe quantum well interfaces

JP Dodson, HE Ercan, J Corrigan, MP Losert… - Physical Review Letters, 2022 - APS
The energies of valley-orbit states in silicon quantum dots are determined by an as yet
poorly understood interplay between interface roughness, orbital confinement, and electron …

Single-shot readout of multiple donor electron spins with a gate-based sensor

MR Hogg, P Pakkiam, SK Gorman, AV Timofeev… - PRX Quantum, 2023 - APS
Proposals for large-scale semiconductor spin-based quantum computers require high-
fidelity single-shot qubit readout to perform error correction and read out qubit registers at …

Long-range electron-electron interactions in quantum dot systems and applications in quantum chemistry

J Knörzer, CJ van Diepen, TK Hsiao, G Giedke… - Physical Review …, 2022 - APS
Long-range interactions play a key role in several phenomena of quantum physics and
chemistry. To study these phenomena, analog quantum simulators provide an appealing …

Fabrication process and failure analysis for robust quantum dots in silicon

JP Dodson, N Holman, B Thorgrimsson… - …, 2020 - iopscience.iop.org
We present an improved fabrication process for overlapping aluminum gate quantum dot
devices on Si/SiGe heterostructures that incorporates low-temperature inter-gate oxidation …

Remote capacitive sensing in two-dimensional quantum-dot arrays

J Duan, MA Fogarty, J Williams, L Hutin, M Vinet… - Nano Letters, 2020 - ACS Publications
We investigate gate-induced quantum dots in silicon nanowire field-effect transistors
fabricated using a foundry-compatible fully depleted silicon-on-insulator (FD-SOI) process. A …

[图书][B] Quantum information processing

JA Bergou, M Hillery, M Saffman - 2021 - Springer
These notes are the result of a one-semester graduate course that was first taught during the
spring semester in 2003 at the CUNY Graduate Center and has been offered several times …

Ray-based framework for state identification in quantum dot devices

JP Zwolak, T McJunkin, SS Kalantre, SF Neyens… - PRX Quantum, 2021 - APS
Quantum dots (QDs) defined with electrostatic gates are a leading platform for a scalable
quantum computing implementation. However, with increasing numbers of qubits, the …