The pathway towards the realization of optical solid-state lasers was gradual and slow. After
Einstein's paper on absorption and stimulated emission of light in 1917 it took until 1960 for …

High-quality CsPbBr 3 thin films have been fabricated by pulse laser deposition (PLD)
technique and severed as an interlayer for n-ZnO/p-GaN heterojunction ultraviolet (UV) …

Surface plasmons, a unique property of metal nanoparticles, have been widely applied to
enhance the performance of optical and electrical devices. In this study, a high quality zinc …

A self-powered, visible-blind ultraviolet (UV) photodetector based on an n-ZnO nanorod
(NRs)/i-MgO/p-GaN structure, light-emitting diode assembled by p-GaN and solution …

Traditional photodetectors generally show a unipolar photocurrent response when
illuminated with light of wavelength equal or shorter than the optical bandgap. Here, it is …

We present successful fabrication of single n-ZnO/p-AlGaN heterojunction nanowires with
excellent optoelectronic properties. Because of the formation of high-quality interfacial …

Monolithic light-emitting diodes (LEDs) that can generate white color at the one-chip level
without the wavelength conversion through packaged phosphors or chip integration for …

We demonstrate the surface plasmon (SP) enhanced n-ZnO/AlN/p-GaN light-emitting diodes
(LEDs) by inserting the Ag nanoparticles (NPs) between the ZnO and AlN layers. The …

Realization of pure and stable ultraviolet electroluminescence (UV EL) of ZnO light-emitting
diode (LED) is still a challenging issue, due to complicated defects of intrinsic ZnO and the …

Interface emission from heterojunction is a shortcoming for electroluminescent devices. A
buffer layer introduced in the heterojunctional interfaces is a potential solution for the …