Atomically precise manufacturing of silicon electronics
Atomically precise manufacturing (APM) is a key technique that involves the direct control of
atoms in order to manufacture products or components of products. It has been developed …
atoms in order to manufacture products or components of products. It has been developed …
Scanning tunneling spectroscopy reveals a silicon dangling bond charge state transition
We report the study of single dangling bonds (DBs) on a hydrogen-terminated silicon (100)
surface using a low-temperature scanning tunneling microscope. By investigating samples …
surface using a low-temperature scanning tunneling microscope. By investigating samples …
Deep learning-guided surface characterization for autonomous hydrogen lithography
As the development of atom scale devices transitions from novel, proof-of-concept
demonstrations to state-of-the-art commercial applications, automated assembly of such …
demonstrations to state-of-the-art commercial applications, automated assembly of such …
Automated extraction of single H atoms with STM: tip state dependency
M Møller, SP Jarvis, L Guérinet, P Sharp… - …, 2017 - iopscience.iop.org
The atomistic structure of the tip apex plays a crucial role in performing reliable atomic-scale
surface and adsorbate manipulation using scanning probe techniques. We have developed …
surface and adsorbate manipulation using scanning probe techniques. We have developed …
Atomic defect classification of the H–Si (100) surface through multi-mode scanning probe microscopy
The combination of scanning tunnelling microscopy (STM) and non-contact atomic force
microscopy (nc-AFM) allows enhanced extraction and correlation of properties not readily …
microscopy (nc-AFM) allows enhanced extraction and correlation of properties not readily …
Imaging molecular orbitals by scanning tunneling microscopy on a passivated semiconductor
Decoupling the electronic properties of a molecule from a substrate is of crucial importance
for the development of single-molecule electronics. This is achieved here by adsorbing …
for the development of single-molecule electronics. This is achieved here by adsorbing …
Multiple atomic scale solid surface interconnects for atom circuits and molecule logic gates
The scientific and technical challenges involved in building the planar electrical connection
of an atomic scale circuit to N electrodes (N> 2) are discussed. The practical, laboratory …
of an atomic scale circuit to N electrodes (N> 2) are discussed. The practical, laboratory …
Nonlocal Activation of a Bistable Atom through a Surface State Charge-Transfer Process <?format ?>on
The reversible hopping of a bistable atom on the Si (100)-(2× 1): H surface is activated
nonlocally by hole injection into Si-Si bond surface states with a low temperature (5 K) …
nonlocally by hole injection into Si-Si bond surface states with a low temperature (5 K) …
Electronic properties of the -doped hydrogenated silicon (100) surface and dehydrogenated structures at 5 K
We present a comparative study of the electronic properties of the clean Si (100) and the
hydrogenated Si (100): H surfaces performed with a low-temperature (5 K) scanning …
hydrogenated Si (100): H surfaces performed with a low-temperature (5 K) scanning …
Reversible charge storage in a single silicon atom
The ultimate miniaturization of electronic devices at the atomic scale with single electrons
requires controlling the reversible charge storage in a single atom. However, reversible …
requires controlling the reversible charge storage in a single atom. However, reversible …