Solvent-dependent singlet oxygen lifetimes: temperature effects implicate tunneling and charge-transfer interactions
The effect of solvent on the lifetime of singlet oxygen, O2 (a1Δg), particularly the pronounced
H/D solvent isotope effect, has drawn the attention of chemists for almost 50 years. The …
H/D solvent isotope effect, has drawn the attention of chemists for almost 50 years. The …
Graphene nanoribbon tunnel field-effect transistor via segmented edge saturation
In this paper, segmented edge saturation (SES) is proposed as a novel method to design
high-performance tunnel FETs (TFETs) using smooth graphene nanoribbon (GNR). When …
high-performance tunnel FETs (TFETs) using smooth graphene nanoribbon (GNR). When …
Carrier dynamics in a tunneling injection quantum dot semiconductor optical amplifier
I Khanonkin, G Eisenstein, M Lorke, S Michael… - Physical Review B, 2018 - APS
The process of tunneling injection is known to improve the dynamical characteristics of
quantum well and quantum dot lasers; in the latter, it also improves the temperature …
quantum well and quantum dot lasers; in the latter, it also improves the temperature …
Interplay of structural design and interaction processes in tunnel-injection semiconductor lasers
Tunnel-injection lasers promise various advantages in comparison to conventional laser
designs. In this paper, the physics of the tunnel-injection process is studied within a …
designs. In this paper, the physics of the tunnel-injection process is studied within a …
Lateral carrier diffusion in InGaAs/GaAs coupled quantum dot-quantum well system
M Pieczarka, M Syperek, D Biegańska, C Gilfert… - Applied Physics …, 2017 - pubs.aip.org
The lateral carrier diffusion process is investigated in coupled InGaAs/GaAs quantum dot-
quantum well (QD-QW) structures by means of spatially resolved photoluminescence …
quantum well (QD-QW) structures by means of spatially resolved photoluminescence …
Spatial control of carrier capture in two-dimensional materials: Beyond energy selection rules
The carrier capture from a two-dimensional transition metal dichalcogenide monolayer into a
quasi-zero-dimensional potential is a decisive process to exploit these remarkable materials …
quasi-zero-dimensional potential is a decisive process to exploit these remarkable materials …
[HTML][HTML] Carrier delocalization in InAs/InGaAlAs/InP quantum-dash-based tunnel injection system for 1.55 µm emission
W Rudno-Rudziński, M Syperek, J Andrzejewski… - AIP Advances, 2017 - pubs.aip.org
We have investigated optical properties of hybrid two-dimensional-zero-dimensional (2D-
0D) tunnel structures containing strongly elongated InAs/InP (001) quantum dots (called …
0D) tunnel structures containing strongly elongated InAs/InP (001) quantum dots (called …
Performance of quantum-dot-based tunnel-injection lasers: A theoretical analysis
Tunnel-injection lasers promise advantages in the modulation bandwidth and temperature
stability in comparison with conventional laser designs. In this paper, we present results of a …
stability in comparison with conventional laser designs. In this paper, we present results of a …
Modulation bandwidth of double tunneling-injection quantum dot lasers: Effect of out-tunneling leakage
LV Asryan, S Kar - IEEE Journal of Quantum Electronics, 2018 - ieeexplore.ieee.org
The effect of out-tunneling leakage of carriers from quantum dots (QDs) on modulation
bandwidth of semiconductor double tunneling-injection (DTI) QD lasers is studied. In this …
bandwidth of semiconductor double tunneling-injection (DTI) QD lasers is studied. In this …
Steering coherence in quantum dots by carriers injection via tunneling
I Khanonkin, S Bauer, O Eyal, JP Reithmaier… - …, 2022 - degruyter.com
Coherent control is a key experimental technique for quantum optics and quantum
information processing. We demonstrate a new degree of freedom in coherent control of …
information processing. We demonstrate a new degree of freedom in coherent control of …