Solvent-dependent singlet oxygen lifetimes: temperature effects implicate tunneling and charge-transfer interactions

M Bregnhøj, M Westberg, F Jensen… - Physical Chemistry …, 2016 - pubs.rsc.org
The effect of solvent on the lifetime of singlet oxygen, O2 (a1Δg), particularly the pronounced
H/D solvent isotope effect, has drawn the attention of chemists for almost 50 years. The …

Graphene nanoribbon tunnel field-effect transistor via segmented edge saturation

Y Lv, W Qin, Q Huang, S Chang… - IEEE Transactions on …, 2017 - ieeexplore.ieee.org
In this paper, segmented edge saturation (SES) is proposed as a novel method to design
high-performance tunnel FETs (TFETs) using smooth graphene nanoribbon (GNR). When …

Carrier dynamics in a tunneling injection quantum dot semiconductor optical amplifier

I Khanonkin, G Eisenstein, M Lorke, S Michael… - Physical Review B, 2018 - APS
The process of tunneling injection is known to improve the dynamical characteristics of
quantum well and quantum dot lasers; in the latter, it also improves the temperature …

Interplay of structural design and interaction processes in tunnel-injection semiconductor lasers

S Michael, M Lorke, M Cepok, C Carmesin, F Jahnke - Physical Review B, 2018 - APS
Tunnel-injection lasers promise various advantages in comparison to conventional laser
designs. In this paper, the physics of the tunnel-injection process is studied within a …

Lateral carrier diffusion in InGaAs/GaAs coupled quantum dot-quantum well system

M Pieczarka, M Syperek, D Biegańska, C Gilfert… - Applied Physics …, 2017 - pubs.aip.org
The lateral carrier diffusion process is investigated in coupled InGaAs/GaAs quantum dot-
quantum well (QD-QW) structures by means of spatially resolved photoluminescence …

Spatial control of carrier capture in two-dimensional materials: Beyond energy selection rules

R Rosati, F Lengers, DE Reiter, T Kuhn - Physical Review B, 2018 - APS
The carrier capture from a two-dimensional transition metal dichalcogenide monolayer into a
quasi-zero-dimensional potential is a decisive process to exploit these remarkable materials …

[HTML][HTML] Carrier delocalization in InAs/InGaAlAs/InP quantum-dash-based tunnel injection system for 1.55 µm emission

W Rudno-Rudziński, M Syperek, J Andrzejewski… - AIP Advances, 2017 - pubs.aip.org
We have investigated optical properties of hybrid two-dimensional-zero-dimensional (2D-
0D) tunnel structures containing strongly elongated InAs/InP (001) quantum dots (called …

Performance of quantum-dot-based tunnel-injection lasers: A theoretical analysis

M Lorke, S Michael, M Cepok, F Jahnke - Applied Physics Letters, 2018 - pubs.aip.org
Tunnel-injection lasers promise advantages in the modulation bandwidth and temperature
stability in comparison with conventional laser designs. In this paper, we present results of a …

Modulation bandwidth of double tunneling-injection quantum dot lasers: Effect of out-tunneling leakage

LV Asryan, S Kar - IEEE Journal of Quantum Electronics, 2018 - ieeexplore.ieee.org
The effect of out-tunneling leakage of carriers from quantum dots (QDs) on modulation
bandwidth of semiconductor double tunneling-injection (DTI) QD lasers is studied. In this …

Steering coherence in quantum dots by carriers injection via tunneling

I Khanonkin, S Bauer, O Eyal, JP Reithmaier… - …, 2022 - degruyter.com
Coherent control is a key experimental technique for quantum optics and quantum
information processing. We demonstrate a new degree of freedom in coherent control of …