Oxygen defect processes in silicon and silicon germanium
A Chroneos, EN Sgourou, CA Londos… - Applied Physics …, 2015 - pubs.aip.org
Silicon and silicon germanium are the archetypical elemental and alloy semiconductor
materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of …
materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of …
[图书][B] Physics of semiconductors
M Grundmann - 2010 - Springer
Semiconductor electronics is commonplace in every household. Semiconductor devices
have enabled economically reasonable fiber-based optical communication, optical storage …
have enabled economically reasonable fiber-based optical communication, optical storage …
Impurity engineering of Czochralski silicon
X Yu, J Chen, X Ma, D Yang - Materials Science and Engineering: R …, 2013 - Elsevier
Microelectronic devices with high integration level and functional complexity are always
requiring larger diameter and more perfect Czochralski (CZ) silicon wafers. Therefore, the …
requiring larger diameter and more perfect Czochralski (CZ) silicon wafers. Therefore, the …
[图书][B] Optical absorption of impurities and defects in semiconducting crystals: electronic absorption of deep centres and vibrational spectra
B Pajot, B Clerjaud - 2012 - books.google.com
This book outlines, with the help of several specific examples, the important role played by
absorption spectroscopy in the investigation of deep-level centers introduced in …
absorption spectroscopy in the investigation of deep-level centers introduced in …
Marker-method calculations for electrical levels using Gaussian-orbital basis sets
JPGMJ Shaw, PR Briddon - Theory of defects in semiconductors, 2007 - Springer
The introduction of defect-related states in the bandgap of semiconductors can be both
advantageous and deleterious to conduction, and it is therefore of great importance to have …
advantageous and deleterious to conduction, and it is therefore of great importance to have …
Controlling the thermoelectric power of silicon–germanium alloys in different crystalline phases by applying high pressure
NV Morozova, IV Korobeinikov, NV Abrosimov… - …, 2020 - pubs.rsc.org
Silicon, germanium and their alloys are classical semiconductors that play an important role
in fundamental sciences and are the basis for modern microelectronics, optoelectronics …
in fundamental sciences and are the basis for modern microelectronics, optoelectronics …
[HTML][HTML] Alloy splitting of the FeGa acceptor level in dilute AlxGa1− xN
The results of conventional deep-level transient spectroscopy (DLTS) and high-resolution
Laplace DLTS measurements of the Fe Ga (0/−) acceptor level in dilute Al x Ga 1− x N layers …
Laplace DLTS measurements of the Fe Ga (0/−) acceptor level in dilute Al x Ga 1− x N layers …
Interaction of A-centers with isovalent impurities in silicon
A Chroneos, CA Londos - Journal of Applied Physics, 2010 - pubs.aip.org
An A-center is an oxygen interstitial atom near a lattice vacancy and is one of the most
common impurity-defect pairs in Czochralski-grown silicon crystals. In the present study …
common impurity-defect pairs in Czochralski-grown silicon crystals. In the present study …
Electronic and dynamical properties of the silicon trivacancy
The trivacancy (V 3) in silicon has been recently shown to be a bistable center in the neutral
charge state, with a fourfold-coordinated configuration, V 3 [FFC], lower in energy than the …
charge state, with a fourfold-coordinated configuration, V 3 [FFC], lower in energy than the …
Vacancy-oxygen defects in silicon: the impact of isovalent doping
Silicon is the mainstream material for many nanoelectronic and photovoltaic applications.
The understanding of oxygen related defects at a fundamental level is essential to further …
The understanding of oxygen related defects at a fundamental level is essential to further …