The demand for improved electronic and optoelectronic devices has fuelled the
development of epitaxial growth techniques for single-crystalline semiconductors. However …

Realizing efficient on-chip light sources has long been the “holy-grail” for Si-photonics
research. Several important breakthroughs were made in this field in the past few years. In …

The deployment of photonic integrated circuits (PICs) necessitates an integration platform
that is scalable, high-throughput, cost-effective, and power-efficient. Here we present a …

Selective area epitaxy (SAE) can be used to grow highly uniform III–V nanostructure arrays
in a fully controllable way and is thus of great interest in both basic science and device …

The monolithic hetero-integration of III/V materials on Si substrates could enable a multitude
of new device applications and functionalities which would benefit from both the excellent …

Seamlessly integrating III-V active devices with Si passive components in a monolithic
manner is the key for fully integrated Si photonics. In this article, we demonstrate high …

Efficient III-V lasers directly grown on Si remain the “holy grail” for present Si-photonics
research. In particular, a bufferless III-V laser grown on the Si-photonics 220 nm silicon-on …

Systematically discusses the growth method, material properties, and applications for key
semiconductor materials MOVPE is a chemical vapor deposition technique that produces …

Hetero‐epitaxy for integration of efficient III‐V lasers on silicon can enable wafer‐scale
silicon photonic integrated circuits, which can unleash the full advantages of silicon …

In many application scenarios, silicon (Si) photonics favors the integration of III-V gain
material onto Si substrate to realize the on-chip light source. In addition to the current …