Epitaxial growth and layer-transfer techniques for heterogeneous integration of materials for electronic and photonic devices
The demand for improved electronic and optoelectronic devices has fuelled the
development of epitaxial growth techniques for single-crystalline semiconductors. However …
development of epitaxial growth techniques for single-crystalline semiconductors. However …
Recent advances in light sources on silicon
Realizing efficient on-chip light sources has long been the “holy-grail” for Si-photonics
research. Several important breakthroughs were made in this field in the past few years. In …
research. Several important breakthroughs were made in this field in the past few years. In …
[HTML][HTML] A monolithic InP/SOI platform for integrated photonics
The deployment of photonic integrated circuits (PICs) necessitates an integration platform
that is scalable, high-throughput, cost-effective, and power-efficient. Here we present a …
that is scalable, high-throughput, cost-effective, and power-efficient. Here we present a …
Selective area epitaxy of III–V nanostructure arrays and networks: Growth, applications, and future directions
Selective area epitaxy (SAE) can be used to grow highly uniform III–V nanostructure arrays
in a fully controllable way and is thus of great interest in both basic science and device …
in a fully controllable way and is thus of great interest in both basic science and device …
How to control defect formation in monolithic III/V hetero-epitaxy on (100) Si? A critical review on current approaches
B Kunert, Y Mols, M Baryshniskova… - Semiconductor …, 2018 - iopscience.iop.org
The monolithic hetero-integration of III/V materials on Si substrates could enable a multitude
of new device applications and functionalities which would benefit from both the excellent …
of new device applications and functionalities which would benefit from both the excellent …
High-speed and low dark current silicon-waveguide-coupled III-V photodetectors selectively grown on SOI
Seamlessly integrating III-V active devices with Si passive components in a monolithic
manner is the key for fully integrated Si photonics. In this article, we demonstrate high …
manner is the key for fully integrated Si photonics. In this article, we demonstrate high …
Bufferless 1.5 µm III-V lasers grown on Si-photonics 220 nm silicon-on-insulator platforms
Efficient III-V lasers directly grown on Si remain the “holy grail” for present Si-photonics
research. In particular, a bufferless III-V laser grown on the Si-photonics 220 nm silicon-on …
research. In particular, a bufferless III-V laser grown on the Si-photonics 220 nm silicon-on …
[图书][B] Metalorganic vapor phase epitaxy (MOVPE): Growth, materials properties, and applications
S Irvine, P Capper - 2019 - books.google.com
Systematically discusses the growth method, material properties, and applications for key
semiconductor materials MOVPE is a chemical vapor deposition technique that produces …
semiconductor materials MOVPE is a chemical vapor deposition technique that produces …
In‐Plane 1.5 µm Distributed Feedback Lasers Selectively Grown on (001) SOI
Hetero‐epitaxy for integration of efficient III‐V lasers on silicon can enable wafer‐scale
silicon photonic integrated circuits, which can unleash the full advantages of silicon …
silicon photonic integrated circuits, which can unleash the full advantages of silicon …
[PDF][PDF] An advanced III-V-on-silicon photonic integration platform
In many application scenarios, silicon (Si) photonics favors the integration of III-V gain
material onto Si substrate to realize the on-chip light source. In addition to the current …
material onto Si substrate to realize the on-chip light source. In addition to the current …