Power electronics reliability: State of the art and outlook
H Wang, F Blaabjerg - IEEE Journal of Emerging and Selected …, 2020 - ieeexplore.ieee.org
This article aims to provide an update of the reliability aspects of research on power
electronic components and hardware systems. It introduces the latest advances in the …
electronic components and hardware systems. It introduces the latest advances in the …
High frequency, high efficiency, and high power density gan-based llc resonant converter: State-of-the-art and perspectives
SA Mortazavizadeh, S Palazzo, A Amendola… - Applied Sciences, 2021 - mdpi.com
Soft switching for both primary and secondary side devices is available by using LLC
converters. This resonant converter is an ideal candidate for today's high frequency, high …
converters. This resonant converter is an ideal candidate for today's high frequency, high …
Short Circuit Capability Characterization and Analysis of p-GaN Gate High-Electron-Mobility Transistors Under Single and Repetitive Tests
Short circuit (SC) capability of 650-V Schottky-type p-GaN gate high-electron-mobility
transistors (HEMTs) under single and repetitive tests is characterized in this article. The …
transistors (HEMTs) under single and repetitive tests is characterized in this article. The …
Monolithic Integration of Gate Driver and Protection Modules With P-GaN Gate Power HEMTs
The high-speed superiority of GaN power devices with silicon-based peripheral circuits is
not yet fully leveraged, mainly due to the parasitic inductance of interconnections. In this …
not yet fully leveraged, mainly due to the parasitic inductance of interconnections. In this …
GaN power integration technology and its future prospects
The planar nature of the GaN heterojunction devices provides extended dimensions for
implementing monolithic power integrated circuits. This article presents a comprehensive …
implementing monolithic power integrated circuits. This article presents a comprehensive …
A behavioral model for short-circuit operation of a GaN-based half bridge
The Short-Circuit (SC) robustness of GaN HEMTs represents a relevant issue for their use in
power electronics. Hence, understanding and simulating their SC behavior is critical to …
power electronics. Hence, understanding and simulating their SC behavior is critical to …
Failure mechanisms of enhancement mode GaN power HEMTs operated in short circuit
C Abbate, G Busatto, A Sanseverino, D Tedesco… - Microelectronics …, 2019 - Elsevier
The paper reports the results of a study based on experimental data and finite element
simulations about the failure mechanism of 650 V p-doped GaN power HEMT operated in …
simulations about the failure mechanism of 650 V p-doped GaN power HEMT operated in …
Study of the short-circuit capability and device instability of p-GaN gate HEMTs by repetitive short-circuit stress
N Yang, C Pan, Z Wu, P Bai, K Chen… - … on Power Electronics, 2023 - ieeexplore.ieee.org
In this article, the device degradation of Schottky-type p-GaN gate high electron mobility
transistors was studied under repetitive short circuit (SC) with various stress parameters …
transistors was studied under repetitive short circuit (SC) with various stress parameters …
Integrated high-speed over-current protection circuit for GaN power transistors
In this work, a new desaturation-based over-current protection circuit is proposed and
monolithically integrated with GaN power HEMTs. Compared to traditional desaturation …
monolithically integrated with GaN power HEMTs. Compared to traditional desaturation …
[HTML][HTML] Analysis and Modeling of a 650 V GaN-based Half Bridge during Short Circuit operation
S Palazzo - 2023 - tesidottorato.depositolegale.it
Seguendo la visione di un futuro verde e sostenibile, l'uso di semiconduttori di tipo Wide
Band Gap (WBG) nell'elettronica di potenza è di fondamentale importanza, poiché le loro …
Band Gap (WBG) nell'elettronica di potenza è di fondamentale importanza, poiché le loro …