Wide bandgap oxide semiconductors constitute a unique class of materials that combine
properties of electrical conductivity and optical transparency. They are being widely used as …

Despite an extensive research effort for over 60 years, an understanding of the origins of
conductivity in wide band gap transparent conducting oxide (TCO) semiconductors remains …

Undesired photoelectronic dormancy through active species decay is adverse to
photoactivity enhancement. An insufficient extrinsic driving force leads to ultrafast deep …

Doping limits, band gaps, work functions and energy band alignments of undoped and
donor-doped transparent conducting oxides ZnO, In 2 O 3, and SnO 2 as accessed by X-ray …

Existing defect models for In 2 O 3 and ZnO are inconclusive about the origin of conductivity,
nonstoichiometry, and coloration. We apply systematic corrections to first-principles …

Bulk and surface sensitive x-ray spectroscopic techniques are applied in tandem to show
that the valence band edge for In 2 O 3 is found significantly closer to the bottom of the …

The bulk and surface electronic structure of In 2 O 3 has proved controversial, prompting the
current combined experimental and theoretical investigation. The band gap of single …

Abstract Cu (In, Ga) Se2 and CdTe heterojunction solar cells grown on rigid (glass) or
flexible foil substrates require p‐type absorber layers of optimum optoelectronic properties …

Electron-transport-layer free perovskite solar cells (ETL-free PSCs) have attracted great
attention due to their low cost and simple manufacturing process. However, an additional …

High-resolution x-ray photoemission spectroscopy, infrared reflectivity and Hall effect
measurements, combined with surface space-charge calculations, are used to show that …