Modeling analysis and geometric investigation of SOI FinFET for RF/AF parameters

Role of Fin Shape on Drain Current of SiO2/HfO2 Based Trigate FinFET Including Quantum Mechanical Effect

S Panchanan, R Maity, A Baidya, NP Maity - Silicon, 2023 - Springer
A compact Lambert W function-based model is proposed to analyze the drain current of
three different fin-shaped Trigate (TG) FinFETs, namely rectangular (RE_TG), trapezoidal …
被引用次数：9 相关文章

Comparative Analysis of Dual Metal Gate Fully Depleted SOI FET With/Without δ-Doped Insulated Layer for AF Application

JPN Verma, P Mani - … Engineering: Proceedings of 6th ICMETE 2022, 2023 - Springer
This paper presents and compares dual metal gate fully depleted SOI FET with/without δ-
doped insulated layer for thermal efficacy, scalability and analog/RF performance. In the …
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