We review the phenomenon of ferromagnetic resonance (FMR) in ferromagnetic (FM) Ga 1−
x Mn x As semiconductor alloys and their heterostructures in thin film form. We will show that …

The concise and accessible chapters of Nanomagnetism and Spintronics, Second Edition,
cover the most recent research in areas of spin-current generation, spin-calorimetric effect …

We present a first-principles theory of the variation of magnetic anisotropy, K, with
temperature, T, in metallic ferromagnets. It is based on relativistic electronic structure theory …

The newly-developing spintronics technology requires materials that allow control of both
the charge and the spin degrees of freedom of the charge carriers. Ferromagnetic …

We present a comprehensive study of the reversal process of perpendicular magnetization
in thin layers of the ferromagnetic semiconductor Ga 1− x Mn x As⁠. For this investigation we …

We have measured the optical constants of Ga 1− x Mn x As from 0.62 to 6 eV, using
spectroscopic ellipsometry. The second derivatives of the dielectric function are examined …

We have investigated the magnetic properties of a piezoelectric actuator/ferromagnetic
semiconductor hybrid structure. Using a GaMnAs epilayer as the ferromagnetic …

Publisher Summary Modem information technology utilizes the charge degree of freedom of
electrons in semiconductors to process the information and the spin degree of freedom in …

The longitudinal and transverse resistivities of differently strained (Ga, Mn) As layers are
theoretically and experimentally studied as a function of the magnetization orientation. The …

We study magnetic and magnetotransport properties of an epitaxial interfacial multiferroic
system consisting of a ferromagnetic Heusler-alloy Co 2 Fe Si and a ferroelectric-oxide Ba Ti …