In this paper, we present a parallel three‐dimensional semiconductor device simulator for
gradual heterojunction bipolar transistor. This simulator uses the drift‐diffusion transport …

In this work we present a parallel solver for the Poisson equation for 3D abrupt
heterojunction bipolar transistors (HBT). Three‐dimensional simulation is essential for …

We survey some unusual eigenvalue problems arising in different applications. We show
that all these problems can be cast as problems of estimating quadratic forms. Numerical …

Parallel finite element and boundary element analysis: theory and applications – A bibliography
(1997–1999) - ScienceDirect Skip to main contentSkip to article Elsevier logo Journals & Books …

This paper presents a physical–mathematical model for abrupt heterojunction transistors
and its solution using numerical methods with application to InP/InGaAs HBTs. The physical …

This paper presents the implementation of a parallel solver for the Poisson, hole and
electron continuity equations applied to a three-dimensional simulation of gradual HBT's in a …

This work presents a 3D parallel bipolar junction transistors (BJT) device simulator. This
simulator was implemented using the MPI library on distributed memory multicomputers. We …

In this work we present a parallel version of two preconditioners. The first one, is based on a
partially decoupled block form of the ILU. We call it Block-ILU (fill, τ, overlap), because it …