In this paper, the crosstalk-induced shoot-through current and induced gate voltage of SiC
planar MOSFETs, SiC symmetrical double-trench MOSFETs and SiC asymmetrical double …

The rapid advancement in nanoscale devices demands innovative gate dielectric materials
to replace traditional Silicon dioxide. This paper investigates the electrical behavior and …

This paper presents the two-dimensional (2-D) numerical simulation results of heavy-ion
induced reverse drain current degradation and single-event burnout (SEB) in the 1.2-kV …

The energy is one of the main infrastructures for human life and industries. Therefore, many
studies have been investigated on energy resources, and especially, lots of renewable …

The unclamped inductive switching (UIS) measurements can be categorized as “low energy”
and “high energy” avalanche. The conventional approach to these tests is to increase the …

In this paper, the unclamped inductive switching experimental results of a 1.2-kV rated N-
Channel conventional power metal-oxide-semiconductor field-effect transistors are …

While SiC MOSFETs are now being utilized in industry their robustness under heavy-duty
applications still remains a concern. In this paper, the results of experimental measurements …

A 1200-V rated CoolSiC Trench MOSFET structure has excellent overall electrical
characteristics due to its unique asymmetric structure. However, it is sensitive to space …

Power semiconductor devices play a determining role in the efficiency and reliability of
power electronics applications such as High Voltage Direct Current (HVDC) transmission …

With the introduction of Silicon Carbide (SiC) technology, SiC power Metal-oxide Field Effect
Transistors (MOSFETs) have become a potential alternative to Silicon Insulated Gate Bipolar …