Heterojunction diodes of ZnS/p-Si have been fabricated using the chemical bath deposition
(CBD) technique at two different deposition durations under both stirring and non-stirring …

In this research, un-and Cd-doped ZnS nanostructures were synthesized using an
electrodeposition method. The electrolyte contained 20 mM ZnCl 2, 20 mM Na 2 S 2 O 3 and …

In the realm of photonic devices, light-matter interaction has recently been a hot topic of
study. In semiconductors, absorption management is critical for device performance …

In this study, nanostructured undoped and Ti-doped ZnS thin films were produced using an
electrochemical deposition method. The indium doped tin oxide (ITO) glass substrate was …

The paper compares structural, optical and electrical properties of ZnS thin films prepared by
thermal evaporation and SILAR techniques. Both techniques produced well-adherent films …

Tin doped zinc sulfide (ZnS: Sn) thin films have been fabricated by sol-gel dip-coating
method on glass and p-Si substrates by varying Sn concentration between 0 wt% and 10 …

High-k Al 2 O 3 with metallic oxide thickness of about 3 nm on n-type GaAs substrate has
been deposited by the atomic layer deposition (ALD) technique. Thus, it has been formed …

Cadmium sulfide, copper sulfide and zinc sulfide films were grown on Si (111) substrate by
successive ionic layer adsorption and reaction method at room temperature. The crystalline …

CdS nanoparticles (0D) were deposited using the SILAR method on the surface of titanium
foil (2D), TiO 2 thin films (2D) and flower-like nanostructures (NF) of TiO 2 (3D). Flower-like …

ZnS thin films were grown on a glass substrate using physical vapor deposition techniques
at room temperature. Subsequently, the thin films were annealed in three different …