Ferroelectric field effect transistors (FeFETs) have attracted attention as next-generation
devices as they can serve as a synaptic device for neuromorphic implementation and a one …

Although 10 years have passed since the initial report of ferroelectricity in hafnia (HfO 2),
researchers are still intensely fascinated by this material system and the promise it holds for …

Hafnium oxide–based ferroelectric materials are promising candidates for next-generation
nanoscale devices because of their ability to integrate into silicon electronics. However, the …

Neuromorphic computing is a promising alternative to conventional computing systems as it
could enable parallel computation and adaptive learning process. However, the …

Ferroelectricity in HfO 2-based materials, especially Hf 0.5 Zr 0.5 O 2 (HZO), is today one of
the most attractive topics because of its wide range of applications in ferroelectric random …

Ferroelectricity in fluorite-structure oxides, such as (doped) HfO2 and ZrO2, and their solid
solution, nanolaminates, and superlattices has attracted increasing interest for future …

About ten years after ferroelectricity was first reported in doped HfO2 polycrystalline films,
there is tremendous interest in this material and ferroelectric oxides are once again in the …

Device applications of ferroelectrics have not only utilized the switchable polarization but
also adopted myriads of emerging physical properties. In particular, ferroelectrics in ultra …

Among currently available energy storage (ES) devices, dielectric capacitors are optimal
systems owing to their having the highest power density, high operating voltages, and a long …

The discovery of ferroelectricity in thin doped hafnium oxide films revived the interest in
ferroelectric (FE) memory concepts. Zirconium‐doped hafnium oxide (HZO) crystallizes at …