A brief review of co-doping

J Zhang, K Tse, M Wong, Y Zhang, J Zhu - Frontiers of physics, 2016 - Springer
Dopants and defects are important in semiconductor and magnetic devices. Strategies for
controlling doping and defects have been the focus of semiconductor physics research …

Room temperature ferromagnetism in Mn doped ZnO: Co nanoparticles by co-precipitation method

V Pazhanivelu, APB Selvadurai, Y Zhao… - Physica B: Condensed …, 2016 - Elsevier
In this present work, the Mn 2+ and Co 2+ ions doping and co-doping effect on the structural,
vibrational, morphological, optical and magnetic behaviors of ZnO based dilute magnetic …

Ferromagnetism induced by oxygen-vacancy complex in (Mn, in) codoped ZnO

K Wu, S Gu, K Tang, S Zhu, M Zhou, Y Huang… - Physica B: Condensed …, 2012 - Elsevier
Mn doped Zinc oxide (ZnO) thin films were prepared by metal organic chemical vapor
deposition (MOCVD) technique. Structural characterizations by X-ray diffraction technique …

On the paramagnetic behavior of heavily doped Zn1− xMnxO films fabricated by Pechini's method

C Sánchez, C Paucar, A Mosquera… - Superlattices and …, 2012 - Elsevier
Heavily doped Zn1− xMnxO (x= 0.3) films were prepared by polymeric precursor method
onto glass substrates and their structural, morphological, optical and magnetic properties …

Mutually beneficial doping of tellurium and nitrogen in ZnO films grown by metal-organic chemical vapor deposition

K Tang, S Gu, J Ye, S Zhu, S Huang, R Gu… - Journal of Vacuum …, 2012 - pubs.aip.org
The advantages of tellurium-nitrogen (Te-N) codoping are investigated in ZnO films grown
by metal-organic chemical vapor deposition. Te incorporation gives aid in enhancing the N …

[HTML][HTML] 非故意掺杂碳对ZnMnO: N 磁性影响的实验与理论研究

吴孔平, 顾书林, 朱顺明, 黄友锐, 周孟然 - 物理学报, 2012 - cpsjournals.cn
利用金属有机源化学气相沉积技术, 通过改变受主掺杂源和导入氢气并提高生长压力来逐步抑制
C 的办法, 在蓝宝石上外延了Mn, N 共掺ZnO 薄膜. X 射线衍射显示所有样品都具有良好的单轴 …

The Ferromagnetic Study of ZnO:(Mn, N) Based on the First-Principle Calculation

H Han, B Zhang - Journal of Superconductivity and Novel Magnetism, 2022 - Springer
The electronic and magnetic properties of ZnO:(Mn, N) and the effect of vacancy defect on its
magnetism were studied systematically, using the first-principle based on density functional …

Sidewall GaAs tunnel junctions fabricated using molecular layer epitaxy

T Ohno, Y Oyama - Science and Technology of Advanced …, 2012 - iopscience.iop.org
In this article we review the fundamental properties and applications of sidewall GaAs tunnel
junctions. Heavily impurity-doped GaAs epitaxial layers were prepared using molecular …

[PDF][PDF] AVALIAÇÃO DO TIPO DE RECIPIENTE NA SÍNTESE POR REAÇÃO DE COMBUSTÃO PARA OBTENÇÂO DE SMDs A BASE DE Zn0, 6Fe0, 4O

LVR Machado, DMPS Júnior, NDS Gomes, MR Silva… - abceram.org.br
Este trabalho propõe investigar a influencia do tipo de recipiente sobre a estrutura,
morfologia e característica magnética de nanopartículas de Zn0, 6Fe0, 4O sintetizadas por …

[引用][C] 真空退火对ZnMnO: N 物理特性影响的研究

孙霞, 吴孔平, 顾书林, 黄时敏, 朱顺明 - 中国科学: 物理学, 力学, 天文学, 2012