Use and performance criteria of photonic devices increase in various application areas such
as information and communication, lighting, and photovoltaics. In many current and future …

Herein, we present experimental data on the record length uniformity within the ensembles
of semiconductor nanowires. The length distributions of Ga-catalyzed GaAs nanowires …

Gallium arsenide (GaAs) is an important compound semiconductor for optoelectronic
devices. However, the fast nonradiative recombination velocity of GaAs requires surface …

Novel oxychalcogenides, such as Bi2O2Se, have many applications because of their
interesting properties such as remarkable hall mobility, the presence of a bandgap, and high …

Liquid Ga droplets play a double role in the self-catalyzed growth of GaAs nanowires on Si
(111) substrates covered with a native SiO x layer: they induce the formation of nanosized …

We report observations of field emission from self-catalyzed GaAs nanowires grown on Si
(111). The measurements were taken inside a scanning electron microscope chamber with …

We discuss the growth of semiconductor nanowires, with an emphasis on the vapor–liquid–
solid growth of III–V nanowires. Special attention is paid to modeling of growth and the …

Chiral optical response is an inherent property of molecules and nanostructures, which
cannot be superimposed on their mirror images. In specific cases, optical chirality can be …

Abstract III–V semiconductors nanowires (NW) have recently attracted a significant interest
for their potential application in the development of high efficiency, highly-integrated …

Semiconductor nanostructures hybridized with metals have been known to offer new
opportunities in nonlinear optics, plasmonics, lasing, biosensors; among them GaAs‐based …