This research work reports reliability assessment of junctionless (JL) FinFET in the presence
of interfacial trap charges and radiations. The degradation in performance of JL FinFET is …

We present a statistical analysis of the cumulative impact of random traps (RTs) and dopants
(RDs) on hot-carrier degradation (HCD) in n-channel FinFETs. Calculations are performed …

This paper establishes an HCI (Hot Carrier Injection) aging model on NMOS device,
focusing on the simultaneous degradation of multiple parameters (drain current in saturation …

This letter investigates the mechanism of abnormal substrate current () after hot carrier stress
(HCS) in fin field effect transistors (FinFETs). Traditionally, after HCS, the drain current and of …

Using the deterministic version of our hot-carrier degradation (HCD) model, we perform a
statistical analysis of the impact of random dopants (RDs) on the HCD in n-FinFETs. For this …

We investigate correlation between linear drain currents (I d, lin) in unstressed n-channel
FinFETs and relative I d, lin changes (ΔI d, lin) during hot-carrier degradation (HCD). For this …

We present a stochastic description of hot-carrier degradation (HCD) which captures the
impact of random traps (RTs) and random dopants (RDs) using our deterministic physical …

We identify correlation between the drain currents in pristine n-channel FinFET transistors
and changes in time-0 currents induced by hot-carrier stress. To achieve this goal, we …

As semiconductor devices become smaller and smaller, device aging simulation plays an
increasingly important role in the overall circuit design. In recent years, the research of …