2D heterostructures for ubiquitous electronics and optoelectronics: principles, opportunities, and challenges

PV Pham, SC Bodepudi, K Shehzad, Y Liu, Y Xu… - Chemical …, 2022 - ACS Publications
A grand family of two-dimensional (2D) materials and their heterostructures have been
discovered through the extensive experimental and theoretical efforts of chemists, material …

Ferroic phases in two-dimensional materials

P Man, L Huang, J Zhao, TH Ly - Chemical Reviews, 2023 - ACS Publications
Two-dimensional (2D) ferroics, namely ferroelectric, ferromagnetic, and ferroelastic
materials, are attracting rising interest due to their fascinating physical properties and …

Large tunneling magnetoresistance in van der Waals ferromagnet/semiconductor heterojunctions

W Zhu, H Lin, F Yan, C Hu, Z Wang, L Zhao… - Advanced …, 2021 - Wiley Online Library
Abstract 2D layered chalcogenide semiconductors have been proposed as a promising
class of materials for low‐dimensional electronic, optoelectronic, and spintronic devices …

Recent progress and challenges in magnetic tunnel junctions with 2D materials for spintronic applications

L Zhang, J Zhou, H Li, L Shen, YP Feng - Applied Physics Reviews, 2021 - pubs.aip.org
As Moore's law is gradually losing its effectiveness, the development of alternative high-
speed and low-energy–consuming information technology with postsilicon-advanced …

Large and tunable magnetoresistance in van der Waals ferromagnet/semiconductor junctions

W Zhu, Y Zhu, T Zhou, X Zhang, H Lin, Q Cui… - Nature …, 2023 - nature.com
Magnetic tunnel junctions (MTJs) with conventional bulk ferromagnets separated by a
nonmagnetic insulating layer are key building blocks in spintronics for magnetic sensors and …

Tuning magnetism at the two-dimensional limit: A theoretical perspective

D Li, S Li, C Zhong, J He - Nanoscale, 2021 - pubs.rsc.org
The discovery of two-dimensional (2D) magnetic materials provides an ideal testbed for
manipulating the magnetic properties at the atomically thin and 2D limit. This review gives …

Giant tunneling magnetoresistance and electroresistance in -based van der Waals multiferroic tunnel junctions

Z Yan, Z Li, Y Han, Z Qiao, X Xu - Physical Review B, 2022 - APS
In the multiferroic tunnel junction (MFTJ) composed of ferromagnetic and ferroelectric
materials, the tunneling electroresistance (TER) coexists with the tunneling …

Recent advances in two-dimensional ferromagnetism: strain-, doping-, structural-and electric field-engineering toward spintronic applications

S Yu, J Tang, Y Wang, F Xu, X Li… - Science and Technology …, 2022 - Taylor & Francis
Since the first report on truly two-dimensional (2D) magnetic materials in 2017, a wide
variety of merging 2D magnetic materials with unusual physical characteristics have been …

Exchange bias and interface-related effects in two-dimensional van der Waals magnetic heterostructures: Open questions and perspectives

MH Phan, V Kalappattil, VO Jimenez, YTH Pham… - Journal of Alloys and …, 2023 - Elsevier
The exchange bias (EB) effect is known as a fundamentally and technologically important
magnetic property of a magnetic bilayer film. It is manifested as a horizontal shift in a …

Giant tunneling magnetoresistance in van der Waals magnetic tunnel junctions formed by interlayer antiferromagnetic bilayer

Y Zhu, XY Guo, LN Jiang, ZR Yan, Y Yan, XF Han - Physical Review B, 2021 - APS
The discovery of two-dimensional (2D) van der Waals (vdW) intrinsic magnets has opened a
promising avenue to design high-performance magnetic tunnel junctions (MTJs) based on …