Low-operating-energy directly modulated lasers for short-distance optical interconnects
S Matsuo, T Kakitsuka - Advances in Optics and Photonics, 2018 - opg.optica.org
We review recent developments in directly modulated lasers (DMLs) with low operating
energy for datacom and computercom applications. Key issues are their operating energy …
energy for datacom and computercom applications. Key issues are their operating energy …
Expanding the silicon photonics portfolio with silicon nitride photonic integrated circuits
A Rahim, E Ryckeboer, AZ Subramanian… - Journal of lightwave …, 2017 - opg.optica.org
The high index contrast silicon-on-insulator platform is the dominant CMOS compatible
platform for photonic integration. The successful use of silicon photonic chips in optical …
platform for photonic integration. The successful use of silicon photonic chips in optical …
27 dB gain III–V-on-silicon semiconductor optical amplifier with> 17 dBm output power
K Van Gasse, R Wang, G Roelkens - Optics express, 2019 - opg.optica.org
Hybrid III–V-on-silicon semiconductor optical amplifiers with high-gain and high-output-
power are important in many applications such as transceivers, integrated microwave …
power are important in many applications such as transceivers, integrated microwave …
[HTML][HTML] 硅基光电异质集成的发展与思考
王子昊， 王霆， 张建军 - 中国科学院院刊, 2022 - old2022.bulletin.cas.cn
光电子器件与传统微电子硅基互补金属氧化物半导体(CMOS) 芯片的集成是未来信息技术的
重要发展方向. 现有硅基光电子集成技术得益于CMOS 技术高集成度, 低成本的优势 …
重要发展方向. 现有硅基光电子集成技术得益于CMOS 技术高集成度, 低成本的优势 …
Low-κ, narrow linewidth III-V-on-SOI distributed feedback lasers with backside sampled Bragg gratings
We demonstrate a heterogeneously integrated III-V-on-SOI distributed feedback laser with a
low grating strength (κ< 40 cm^− 1) and a narrow linewidth of Δν= 118 kHz. The laser …
low grating strength (κ< 40 cm^− 1) and a narrow linewidth of Δν= 118 kHz. The laser …
Membrane III-V/Si DFB laser using uniform grating and width-modulated Si waveguide
T Aihara, T Hiraki, T Fujii, K Takeda… - Journal of Lightwave …, 2020 - opg.optica.org
Membrane buried-heterostructure III-V/Si distributed feedback (DFB) lasers with a stopband-
modulated cavity on a Si substrate have been developed. The membrane III-V layers with …
modulated cavity on a Si substrate have been developed. The membrane III-V layers with …
High speed direct modulation of a heterogeneously integrated InP/SOI DFB laser
An integrated laser source to a silicon photonics circuit is an important requirement for
optical interconnects. We present direct modulation of a heterogeneously integrated …
optical interconnects. We present direct modulation of a heterogeneously integrated …
Direct modulation of 1.3 μm quantum dot lasers on silicon at 60 C
YH Jhang, R Mochida, K Tanabe, K Takemasa… - Optics express, 2016 - opg.optica.org
We demonstrate direct modulation of an InAs/GaAs quantum dot (QD) laser on Si. A Fabry–
Pérot QD laser was integrated on Si by an ultraviolet-activated direct bonding method, and a …
Pérot QD laser was integrated on Si by an ultraviolet-activated direct bonding method, and a …
Membrane buried-heterostructure DFB laser with an optically coupled III-V/Si waveguide
T Aihara, T Hiraki, K Takeda, T Fujii, T Kakitsuka… - Optics …, 2019 - opg.optica.org
We have developed a membrane buried-heterostructure (BH) distributed feedback (DFB)
laser consisting of an optically coupled III-V/Si waveguide and SiN surface grating. A 230 …
laser consisting of an optically coupled III-V/Si waveguide and SiN surface grating. A 230 …
High-efficiency operation of membrane distributed-reflector lasers on silicon substrate
T Hiratani, D Inoue, T Tomiyasu… - IEEE Journal of …, 2017 - ieeexplore.ieee.org
To advance on-chip optical interconnections, membrane distributed-reflector (DR) lasers
with low threshold current and high-efficiency operation at one side output were realized …
with low threshold current and high-efficiency operation at one side output were realized …