101-GHz InAlN/GaN HEMTs on silicon with high Johnson's figure-of-merit
CW Tsou, CY Lin, YW Lian… - IEEE Transactions on …, 2015 - ieeexplore.ieee.org
In this brief, the InAlN/GaN high-electron mobility transistors (HEMTs) on silicon substrate
with high Johnson's figure-of-merit (J-FOM) are presented. A trilayer photoresist of …
with high Johnson's figure-of-merit (J-FOM) are presented. A trilayer photoresist of …
High-Mobility Normally OFF Al2O3/AlGaN/GaN MISFET With Damage-Free Recessed-Gate Structure
J Zhang, L He, L Li, Y Ni, T Que, Z Liu… - IEEE Electron …, 2018 - ieeexplore.ieee.org
In this letter, partial recessed-gate Al 2 O 3/AlGaN/GaN MISFET is experimentally
demonstrated based on selective-area growth. The device features different contents of Al in …
demonstrated based on selective-area growth. The device features different contents of Al in …
Atomic layer etching technique for InAlN/GaN heterostructure with AlN etch-stop layer
An atomic layer etching (ALE) technique for InAlN/AlN/GaN structure was investigated for the
first time. Different recipes with O 2 modification times of 30–180 s and BCl 3 removal RF …
first time. Different recipes with O 2 modification times of 30–180 s and BCl 3 removal RF …
High Threshold Voltage Uniformity and Low Hysteresis Recessed-Gate Al2O3/AlN/GaN MISFET by Selective Area Growth
L He, F Yang, L Li, Z Chen, Z Shen… - … on Electron Devices, 2017 - ieeexplore.ieee.org
In this paper, a normally off Al 2 O 3/AlN/GaN MISFET on Si substrate for achieving high
threshold voltage stability and uniformity is obtained based on selective area growth. A thin …
threshold voltage stability and uniformity is obtained based on selective area growth. A thin …
The Atomic Layer Etching Technique with Surface Treatment Function for InAlN/GaN Heterostructure
This paper studied an atomic layer etching (ALE) technique with a surface treatment function
for InAlN/GaN heterostructures with AlN spacer layers. Various parameters were attempted …
for InAlN/GaN heterostructures with AlN spacer layers. Various parameters were attempted …
Device characteristics and performance estimation of nearly lattice-matched InAlN/AlGaN heterostructure field-effect transistors
M Miyoshi, T Tsutsumi, G Nishino, Y Miyachi… - Journal of Vacuum …, 2016 - pubs.aip.org
A nearly lattice-matched In 0.12 Al 0.88 N/Al 0.21 Ga 0.79 N heterostructure field-effect
transistor (HFET) was fabricated and its device characteristics were evaluated. The …
transistor (HFET) was fabricated and its device characteristics were evaluated. The …
InAlN/GaN and AlGaN/GaN HEMT technologies comparison for microwave applications
LE Velikovskiy, PE Sim, OI Demchenko… - IOP Conference …, 2021 - iopscience.iop.org
High electron mobility transistors (HEMTs) technologies based on AlGaN/GaN and
InAlN/GaN heterostructures have been developed. The research focused on influence of …
InAlN/GaN heterostructures have been developed. The research focused on influence of …
Dynamic variation of carrier transport properties of recessed Au-free ohmic contacts to InAlN/AlN/GaN on Si-wafer
T Yoshida, T Egawa - Japanese Journal of Applied Physics, 2018 - iopscience.iop.org
The temperature dependence of specific contact resistivity of recessed ohmic contacts was
investigated to examine the carrier conduction mechanism in Ti/Al/W ohmic contacts on …
investigated to examine the carrier conduction mechanism in Ti/Al/W ohmic contacts on …
Improved mobility in InAlN/AlGaN two-dimensional electron gas heterostructures with an atomically smooth heterointerface
D Hosomi, Y Miyachi, T Egawa… - Japanese Journal of …, 2018 - iopscience.iop.org
We attempted to improve the mobility of InAlN/AlGaN two-dimensional electron gas (2DEG)
heterostructures by achieving an atomically smooth heterointerface in metalorganic …
heterostructures by achieving an atomically smooth heterointerface in metalorganic …
A balancing method for low Ron and high Vth normally-off GaN MISFET by preserving a damage-free thin AlGaN barrier layer
J Zhang, L He, L Li, Y Ni, T Que, Z Liu… - 2018 IEEE 30th …, 2018 - ieeexplore.ieee.org
Partially AlGaN recessed scheme based on selective area growth was experimentally
demonstrated to improve the performance of normally-off GaN MISFET. The damage-free …
demonstrated to improve the performance of normally-off GaN MISFET. The damage-free …