HfO 2-based resistive switching memory (RRAM) combines several outstanding properties,
such as high scalability, fast switching speed, low power, compatibility with complementary …

Organolead halide perovskite materials open up a new era for developing low-cost and high
efficiency solar cells due to their simple and inexpensive fabrication process, superior light …

In this paper, we investigate the random telegraph noise (RTN) in hafnium-oxide resistive
random access memories in high resistive state (HRS). The current fluctuations are …

In this paper, we report about the derivation of a physics-based compact model of random
telegraph noise (RTN) in HfO 2-based resistive random access memory (RRAM) devices …

In this letter, two distinct retention degradation regions, a rapid resistance relaxation effect
followed by a slow resistance loss process, were observed from high-resistance state (HRS) …

Random telegraph noise is a widely investigated phenomenon affecting the reliability of the
reading operation of the class of memristive devices whose operation relies on formation …

We present a circuit technique to extract true random numbers from carrier capture and
emission in oxide traps in the emerging redox-based resistive memory (ReRAM). This …

Random telegraph noise (RTN) is often considered a nuisance or, more critically, a key
reliability challenge for miniaturized semiconductor devices. However, this picture is …

In this paper, we propose new guidelines for the analysis of random telegraph noise (RTN)
in electronic devices. Starting from an in-depth understanding of RTN signal characteristics …

In this paper, we delve into one of the most relevant defects-related phenomena causing
failures in the operation of modern nanoscale electron devices, namely Random Telegraph …