Piezoresistive sensors are among the earliest micromachined silicon devices. The need for
smaller, less expensive, higher performance sensors helped drive early micromachining …

Although ultrasonic (US) wire bonding has been widely applied in microelectronic
packaging industry for decades, the bonding mechanisms are not yet well understood. This …

CMOS-based microsensors benefit from well-established fabrication technologies and the
possibility of on-chip circuitry. In these devices, added on-chip functionality can be …

This paper reports a novel multidimensional complementary metal-oxide semiconductor
(CMOS) based stress sensor. The device uses an octagonal n-well in a p-substrate and …

Thermosonic ball bonding processes on test chips with Al metallized bonding pads are
optimized with one Au and two Cu wire types, all 25 mum diameter, obtaining average shear …

This paper reports the design, fabrication, and characterization of a two-dimensional stress-
sensor array based on a stress-sensor element exploiting the transverse pseudo-Hall effect …

Ultrasonic in situ force signals from integrated piezo-resistive microsensors were used
previously to describe the interfacial stick-slip motion as the most important mechanism in …

A model of friction during thermosonic ball bonding is reported. The model is based on
recent ultrasonic stress measurements during ball bonding using piezoresistive …

In this paper, failure mode and mechanism analysis on Cu wire bond and bond pad
reliability for Cu/low-k chip are investigated through wire pull test and finite-element analysis …

A ball bonding process in wire bonding generally involves impact followed by ultrasonic
(US) bonding prior to wedge bonding. During the ball bonding process, the impact force …