This review introduces relevant nanoscale thermal transport processes that impact thermal
abatement in power electronics applications. Specifically, we highlight the importance of …

By focusing electrons on probes with a diameter of 50 pm, aberration-corrected scanning
transmission electron microscopy (STEM) is currently crossing the border to probing …

We suggest a method for chemical mapping that is based on scanning transmission electron
microscopy (STEM) imaging with a high-angle annular dark field (HAADF) detector. The …

In scanning transmission electron microscopy using a high-angle annular dark field detector,
image intensity strongly depends on specimen thickness and composition. In this paper we …

Several instrumental imperfections of transmission electron microscopes are characterized
and their effects on the results of quantitative scanning electron microscopy (STEM) are …

Radioactive M 27 g (t 1/2= 9.5 min) was implanted into GaN of different doping types at
CERN's ISOLDE facility and its lattice site determined via β− emission channeling. Following …

The Debye–Waller factor explains the temperature dependence of the intensities of X-ray or
neutron diffraction peaks. It is defined in terms of the B matrix whose elements Bαβ are mean …

Abstract InGaN/GaN quantum wells (QWs) with sub-nanometer thickness can be employed
in short-period superlattices for bandgap engineering of efficient optoelectronic devices, as …

Cleaved ScAlMgO4 (SCAM) substrates with small lattice mismatch of 1.8% to GaN were
used for metalorganic vapor phase epitaxial (MOVPE) growth of GaN. A single crystalline …

A method for determining concentrations from high-angle annular dark field-scanning
transmission electron microscopy images is presented. The method is applied to an …