Recent advances in GaN‐based power HEMT devices
The ever‐increasing power density and operation frequency in electrical power conversion
systems require the development of power devices that can outperform conventional Si …
systems require the development of power devices that can outperform conventional Si …
Prospects of III-nitride optoelectronics grown on Si
The use of III-nitride-based light-emitting diodes (LEDs) is now widespread in applications
such as indicator lamps, display panels, backlighting for liquid-crystal display TVs and …
such as indicator lamps, display panels, backlighting for liquid-crystal display TVs and …
The 2018 GaN power electronics roadmap
H Amano, Y Baines, E Beam, M Borga… - Journal of Physics D …, 2018 - iopscience.iop.org
Gallium nitride (GaN) is a compound semiconductor that has tremendous potential to
facilitate economic growth in a semiconductor industry that is silicon-based and currently …
facilitate economic growth in a semiconductor industry that is silicon-based and currently …
N-polar GaN epitaxy and high electron mobility transistors
This paper reviews the progress of N-polar ($000\mathop 1\limits^\_ $) GaN high frequency
electronics that aims at addressing the device scaling challenges faced by GaN high …
electronics that aims at addressing the device scaling challenges faced by GaN high …
Ultrathin-barrier AlGaN/GaN heterostructure: A recess-free technology for manufacturing high-performance GaN-on-Si power devices
(Al) GaN recess-free normally OFF technology is developed for fabrication of high-yield
lateral GaN-based power devices. The recess-free process is achieved by an ultrathin …
lateral GaN-based power devices. The recess-free process is achieved by an ultrathin …
Design of step-graded AlGaN buffers for GaN-on-Si heterostructures grown by MOCVD
For the growth of low-defect crack-free GaN heterostructures on large-area silicon
substrates, compositional grading of AlGaN is a widely adapted buffer technique to restrict …
substrates, compositional grading of AlGaN is a widely adapted buffer technique to restrict …
A > 3 kV/2.94 m cm2 and Low Leakage Current With Low Turn-On Voltage Lateral GaN Schottky Barrier Diode on Silicon Substrate With Anode Engineering …
T Zhang, J Zhang, H Zhou, Y Wang… - IEEE Electron …, 2019 - ieeexplore.ieee.org
In this letter, we report on demonstrating high-performance lateral GaN Schottky barrier
diode (SBD) on silicon substrate with low turn-on voltage (), high breakdown voltage (BV) …
diode (SBD) on silicon substrate with low turn-on voltage (), high breakdown voltage (BV) …
AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si (111)
S Tripathy, VKX Lin, SB Dolmanan, JPY Tan… - Applied Physics …, 2012 - pubs.aip.org
This Letter reports on the epitaxial growth, characterization, and device characteristics of
crack-free AlGaN/GaN heterostructures on a 200 mm diameter Si (111) substrate. The total …
crack-free AlGaN/GaN heterostructures on a 200 mm diameter Si (111) substrate. The total …
Uniform growth of AlGaN/GaN high electron mobility transistors on 200 mm silicon (111) substrate
D Christy, T Egawa, Y Yano, H Tokunaga… - Applied Physics …, 2013 - iopscience.iop.org
Abstract Crack-free AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on a 200
mm Si substrate by metal–organic chemical vapor deposition (MOCVD) is presented. As …
mm Si substrate by metal–organic chemical vapor deposition (MOCVD) is presented. As …
First demonstration of high-power GaN-on-silicon transistors at 40 GHz
F Medjdoub, M Zegaoui, B Grimbert… - IEEE electron device …, 2012 - ieeexplore.ieee.org
In this letter, high-output-power-density GaN-based high-electron-mobility transistors grown
on a 100-mm silicon substrate is demonstrated for the first time at 40 GHz. The use of an …
on a 100-mm silicon substrate is demonstrated for the first time at 40 GHz. The use of an …