Formation of abrupt tunneling junction for the sub-nanometer tunnel FET (TFET) is crucial for
achieving better electrical behavior. This task is more challenging in the case of dopingless …

A gate engineered InGaN dopingless tunnel FET (DL-TFET) using the charge plasma
concept is proposed and investigated by silvaco Atlas simulation. In 0.75 Ga 0.25 N is a …

For Low power consumption, an emerging device that depends on lowering the supply
voltage with downscaling is proposed which is known as the Tunnel-FET (TFET). In general …

This manuscript exclusively addresses the reliability concern of a double-drain vertical TFET
(DD-VTFET) by analysing the influence of interface trap charges and variation in ambient …

In this paper, the impact of ferroelectric layer thickness (t FE) on input drain current
characteristic is reported in ferroelectric tunnel junction (FTJ) TFET through TCAD simulator …

The favorable electrostatic potential and tunneling underneath the overall gate region, which
prevents legitimate source to drain tunneling, controllability over the gate is assisted in …

In this paper, we investigate the effect of interface trap charges on the variation of
heterogeneous gate dielectric junctionless-tunnel FET (JL-TFET) by introducing both donor …

In this paper, we have proposed dopingless gate all around (GAA) nanowire tunnel field-
effect transistor (NWTFET) made up of dual-material channel (DMaC). Charge-plasma (CP) …

In this research article, a device called dual dielectric gate hetero-material junctionless TFET
(DD-HJLTFET) is proposed using a novel amalgamation of Si 0.1 Ge 0.9/GaAs for the first …

This study investigates a junctionless tunnel field-effect transistor with a dual material gate
and a heterostructure channel/source interface (DMG-H-JLTFET). We find that using the …