PCMO RRAM for integrate-and-fire neuron in spiking neural networks
S Lashkare, S Chouhan, T Chavan… - IEEE Electron …, 2018 - ieeexplore.ieee.org
Resistance random access memories (RRAM) or memristors with an analog change of
conductance are widely explored as an artificial synapse, eg, Pr 0.7 Ca 0.3 MnO 3 (PCMO) …
conductance are widely explored as an artificial synapse, eg, Pr 0.7 Ca 0.3 MnO 3 (PCMO) …
Arbitrary spike time dependent plasticity (STDP) in memristor by analog waveform engineering
N Panwar, B Rajendran… - IEEE Electron Device …, 2017 - ieeexplore.ieee.org
In the literature, various pulse-based programming schemes have been used to mimic
typical spike time-dependent plasticity (STDP)-based learning rule observed in biological …
typical spike time-dependent plasticity (STDP)-based learning rule observed in biological …
[PDF][PDF] Review of analog neuron devices for hardware-based spiking neural networks
To process data operations more efficiently in deep neural networks (DNNs), studies on
spiking neural networks (SNNs) have been conducted. In the reported literature, CMOS …
spiking neural networks (SNNs) have been conducted. In the reported literature, CMOS …
PCMO-based RRAM and NPN bipolar selector as synapse for energy efficient STDP
Resistance random access memories (RRAMs) are widely explored to show spike time
dependent plasticity (STDP) as a learning rule to show biological synaptic behavior, as …
dependent plasticity (STDP) as a learning rule to show biological synaptic behavior, as …
[HTML][HTML] PrxCa1− xMnO3 based stochastic neuron for Boltzmann machine to solve “maximum cut” problem
The neural network enables efficient solutions for Nondeterministic Polynomial-time (NP)
hard problems, which are challenging for conventional von Neumann computing. The …
hard problems, which are challenging for conventional von Neumann computing. The …
Self-Heating During submicrosecond Current Transients in Pr0.7Ca0.3MnO3-Based RRAM
In filamentary RRAM, the role of self-heating in set/reset (by ion transport) is well
established. However, in nonfilamentary Pr 0.7 Ca 0.3 MnO 3 (PCMO) RRAM, self-heating …
established. However, in nonfilamentary Pr 0.7 Ca 0.3 MnO 3 (PCMO) RRAM, self-heating …
Reliable resistive switching of epitaxial single crystalline cubic Y-HfO2 RRAMs with Si as bottom electrodes
Previous studies have mainly focused on the resistive switching (RS) of amorphous or
polycrystalline HfO 2-RRAM. The RS of single crystalline HfO 2 films has been rarely …
polycrystalline HfO 2-RRAM. The RS of single crystalline HfO 2 films has been rarely …
Self-Powered Resistance-Switching Properties of Pr0.7Ca0.3MnO3 Film Driven by Triboelectric Nanogenerator
Y Huang, L Wan, J Jiang, L Li, J Zhai - Nanomaterials, 2022 - mdpi.com
As one of the promising non-volatile memories (NVMs), resistive random access memory
(RRAM) has attracted extensive attention. Conventional RRAM is deeply dependent on …
(RRAM) has attracted extensive attention. Conventional RRAM is deeply dependent on …
Nanoscale Side-Contact Enabled Three Terminal Pr0.7Ca0.3MnO3 Resistive Random Access Memory for In-Memory Computing
S Lashkare, S Subramoney… - IEEE Electron Device …, 2020 - ieeexplore.ieee.org
Resistive random-access memory (RRAM) devices that can execute logic are promising for
in-memory computing. In state-of-the-art, a complementary resistive switch (CRS) bit-cell of …
in-memory computing. In state-of-the-art, a complementary resistive switch (CRS) bit-cell of …
Temperature Effects in SET/RESET Voltage–Time Dilemma in Pr0.7Ca0.3MnO3-Based RRAM
To understand the voltage-time dilemma in Pr 0.7 Ca 0.3 MnO 3 (PCMO)-based resistive
random access memory, we present switching transient currents for 10 ns-1 s for both SET …
random access memory, we present switching transient currents for 10 ns-1 s for both SET …