Performance investigation of elevated source EBG TFET based photosensor for near-infrared light sensing applications
In this manuscript, an elevated source TFET with extended back gate (ES-EBG-TFET) based
photosensor is designed to offer improvement in optical performance for detecting incident …
photosensor is designed to offer improvement in optical performance for detecting incident …
Performance analysis of highly sensitive vertical tunnel FET for detecting light in near-IR range
In this paper, an optically gated vertical tunnel field-effect transistor (OG-VTFET) based
photodetector with different gate oxides is investigated to detect incident light with narrow …
photodetector with different gate oxides is investigated to detect incident light with narrow …
Line-tunneling based GaP/Si heterostructure vertical gate-all-around tunnel FET for enhanced electrical performance
JB Bokka, BVJ Doddi - Materials Science and Engineering: B, 2025 - Elsevier
This study explores strategies to enhance Tunnel FET performance through innovative
device geometry and heterostructure integration. The use of a GaP/Si heterostructure …
device geometry and heterostructure integration. The use of a GaP/Si heterostructure …
Performance investigation of ferroelectric L-shaped tunnel FET with suppressed corner tunneling for low power applications
AK Pathakamuri, CK Pandey - AEU-International Journal of Electronics and …, 2024 - Elsevier
In this work, a ferroelectric L-shaped tunnel FET (FE-LSTFET) is introduced to offer
improvement in various DC and analog/high-frequency parameters. In this design, the …
improvement in various DC and analog/high-frequency parameters. In this design, the …
Performance evaluation of GPVs in existing TFET and proposed DG-JL-TFET: enhancing the RF performance through qualitative and quantitative approaches
T Raja, K Sekhar - Applied Physics A, 2024 - Springer
This work thoroughly investigates the variations in geometrical parameters of both existing
Tunnel Field-Effect Transistors (TFETs) and proposed Double-Gate Junctionless Tunnel …
Tunnel Field-Effect Transistors (TFETs) and proposed Double-Gate Junctionless Tunnel …
Interfacial charge and temperature analysis of gate-all-around line tunneling TFET for improved device reliability
KRN Karthik, CK Pandey - Physica Scripta, 2024 - iopscience.iop.org
In this article, the impact of interface-trap charges (ITCs) on the DC and analog/RF
parameters of gate-all-around vertical TFET (GAA-VTFET) are considered to evaluate the …
parameters of gate-all-around vertical TFET (GAA-VTFET) are considered to evaluate the …
A high-performance capacitorless 1T-DRAM based on Z-shaped electron-hole bilayer TFET and SiGe memory window
H Liu, X Zhou, Y Li, P Li, L Pan, P Wang - Physica Scripta, 2024 - iopscience.iop.org
In this paper, a novel capacitorless dynamic random access memory (Z-EHBTFET 1T-
DRAM) is designed based on a Z-shaped electron–hole bilayer tunnel field-effect transistor …
DRAM) is designed based on a Z-shaped electron–hole bilayer tunnel field-effect transistor …
Performance optimization of AlGaAs and Al x Ga 1− x As based SM-TM-DG-JL-TFET for an analog/RF applications
R Tamilarasi, S Karthik - Physica Scripta, 2024 - iopscience.iop.org
This study aims to enhance the efficiency of the Double Gate-Junctionless-Tunnel Field
Effect Transistor (DG-JL-TFET) by optimizing the utilization of AlGaAs and GaAs/Si/AlGaAs …
Effect Transistor (DG-JL-TFET) by optimizing the utilization of AlGaAs and GaAs/Si/AlGaAs …
Design and investigation of gaussian doped junction free SMDG and TMDG-TFET for analog/RF applications
R Tamilarasi, S Karthik - Engineering Research Express, 2024 - iopscience.iop.org
This research investigates four variants of Gaussian Doped (GD) Double Gate Single
Material and Tri-Material Junction-Free Tunnel-Field-Effect-Transistors (GD-DG-JF-TFETs) …
Material and Tri-Material Junction-Free Tunnel-Field-Effect-Transistors (GD-DG-JF-TFETs) …
Enhancing Performance and Versatility of DG-JL-TFET with A1N Piezoelectric Materials for High-Power Applications
R Tamilarasi, S Karthik - 2024 International Conference on …, 2024 - ieeexplore.ieee.org
The purpose of this study is to investigate the incorporation of aluminium nitride (AIN)
piezoelectric materials into double-gate junctionless tunnel field-effect transistors (DG-JL …
piezoelectric materials into double-gate junctionless tunnel field-effect transistors (DG-JL …