Growth and applications of group III-nitrides
O Ambacher - Journal of physics D: Applied physics, 1998 - iopscience.iop.org
Recent research results pertaining to InN, GaN and AlN are reviewed, focusing on the
different growth techniques of Group III-nitride crystals and epitaxial films, heterostructures …
different growth techniques of Group III-nitride crystals and epitaxial films, heterostructures …
Precursor chemistry for main group elements in semiconducting materials
The birth of the modern electronics industry can be traced to the invention of the first
transistor by Shockley, Brattain, and Bardeen at Bell Laboratories in 1948. This transistor …
transistor by Shockley, Brattain, and Bardeen at Bell Laboratories in 1948. This transistor …
Metal organic vapour phase epitaxy of AlN, GaN, InN and their alloys: A key chemical technology for advanced device applications
IM Watson - Coordination Chemistry Reviews, 2013 - Elsevier
This article reviews metal organic vapour phase epitaxy (MOVPE) processes developed for
the group 13 nitrides AlN, GaN, InN and their alloys. The binaries are direct-gap …
the group 13 nitrides AlN, GaN, InN and their alloys. The binaries are direct-gap …
Pulsed chemical vapor deposition for crystalline aluminum nitride thin films and buffer layers on silicon and silicon carbide
AJ McLeod, ST Ueda, PC Lee, J Spiegelman… - Thin Solid Films, 2023 - Elsevier
Low temperature aluminum nitride (AlN) deposition has applications ranging from serving as
a heat spreading material to serving as a buffer layer for III-V semiconductors on silicon or …
a heat spreading material to serving as a buffer layer for III-V semiconductors on silicon or …
Group III nitrides
Optical, electrical, mechanical, and thermal properties of group III nitrides, inclusive of AlN,
GaN, InN and their ternary and quaternary alloys, are discussed. The driving force for group …
GaN, InN and their ternary and quaternary alloys, are discussed. The driving force for group …
[PDF][PDF] 高热导电绝缘氮化铝陶瓷在宇航器件中的应用: 概述, 挑战和展望
何端鹏， 黄雪吟， 任刚， 汪洋， 于翔天， 李岩， 邢焰… - 硅酸盐学报, 2022 - researching.cn
氮化铝(AlN) 陶瓷具有高热导, 高电阻, 低介电损耗, 低膨胀以及良好的力学性能等特性,
可用作高性能导热基板和陶瓷封装材料. 本工作评述了AlN 粉体及陶瓷的制备技术 …
可用作高性能导热基板和陶瓷封装材料. 本工作评述了AlN 粉体及陶瓷的制备技术 …
A Study of Bisazido (dimethylamino‐propyl) gallium as a Precursor for the OMVPE of Gallium Nitride Thin Films in a Cold‐Wall Reactor System under Reduced …
A Devi, W Rogge, A Wohlfart, F Hipler… - Chemical Vapor …, 2000 - Wiley Online Library
The use of alternative nitrogen sources for growing GaN materials by organometallic vapor
phase epitaxy (OMVPE) is being continuously investigated in the hope of achieving device …
phase epitaxy (OMVPE) is being continuously investigated in the hope of achieving device …
Group 13/15 organometallic compounds-synthesis, structure, reactivity and potential applications
S Schulz - Advances in Organometallic Chemistry, 2003 - books.google.com
Group 13/15 compounds have a long-standing history in inorganic chemistry and have been
known for almost two centuries. First reports on such compounds go back to 1809, when …
known for almost two centuries. First reports on such compounds go back to 1809, when …
Investigations on InN whiskers grown by chemical vapour deposition
Nanostructures of compound semiconductors of group-III nitrides are ideal building blocks
for nanoscale optoelectronic devices. InN has a low decomposition temperature and the …
for nanoscale optoelectronic devices. InN has a low decomposition temperature and the …
Mechanisms for reactions of trimethylaluminum with molecular oxygen and water
Abstract (CH 3) 3 Al (TMA) has been employed for preparation of various thin films. It is also
known to be hypergolic in the air. To unveil the hypergolic phenomenon, the mechanism for …
known to be hypergolic in the air. To unveil the hypergolic phenomenon, the mechanism for …