An experimental study on determination of the shottky diode current-voltage characteristic depending on temperature with artificial neural network
Shottky diodes are one of the important components of electronic systems. Therefore, it is
very important to determine the parameters of the diodes according to the area in which they …
very important to determine the parameters of the diodes according to the area in which they …
Investigation of temperature-dependent electrical parameters in a Schottky barrier diode with multi-walled carbon nanotube (MWCNT) interface
We research the electrical parameters of the MWCNT/n-6H-SiC Schottky barrier diode (SBD)
as a function of temperature. Voltage-dependent current and the capacitance measurements …
as a function of temperature. Voltage-dependent current and the capacitance measurements …
Temperature dependence of current-and capacitance–voltage characteristics of an Au/4H-SiC Schottky diode
M Gülnahar - Superlattices and Microstructures, 2014 - Elsevier
In this study, the current–voltage (I–V) and capacitance–voltage (C–V) measurements of an
Au/4H-SiC Schottky diode are characterized as a function of the temperature in 50–300 K …
Au/4H-SiC Schottky diode are characterized as a function of the temperature in 50–300 K …
Thermal sensitivity and barrier height inhomogeneity in thermally annealed and un-annealed Ni/n-6H-SiC Schottky diodes
Abstract The Ni/n-6 H-SiC Schottky barrier diodes (SBDs) have been fabricated. Then, they
have been thermally annealed at 700 o C for 2 min. Their forward bias voltage versus …
have been thermally annealed at 700 o C for 2 min. Their forward bias voltage versus …
Investigation of inhomogeneous barrier height for Au/n-type 6H-SiC Schottky diodes in a wide temperature range
T Güzel, AK Bilgili, M Özer - Superlattices and Microstructures, 2018 - Elsevier
Curent-Voltage (IV) properties of Au/6H-SiC/Au Schottky diodes are investigated and results
are analised dependent on temperature at 80–400 K range. Fundamental parameters such …
are analised dependent on temperature at 80–400 K range. Fundamental parameters such …
Neural network estimations of annealed and non-annealed Schottky diode characteristics at wide temperatures range
Abstract In this study, Artificial Neural Network (ANN) model has been proposed to
characterize the annealed and the non-annealed Schottky diode from experimental data …
characterize the annealed and the non-annealed Schottky diode from experimental data …
Gaussian distribution of inhomogeneous barrier height in tungsten/4H-SiC (000-1) Schottky diodes
S Toumi, A Ferhat-Hamida, L Boussouar… - Microelectronic …, 2009 - Elsevier
The Gaussian distribution model have been used to analyze the anomalies observed in
tungsten (W)/4H-SiC current voltage characteristics due to the barrier inhomogeneities that …
tungsten (W)/4H-SiC current voltage characteristics due to the barrier inhomogeneities that …
Improved electrical parameters of vacuum annealed Ni/4H-SiC (0 0 0 1) Schottky barrier diode
The reported work has been focused on the improvement of electrical parameters of
Schottky diode using vacuum annealing at mild temperature in Ar gas ambient. Nickel …
Schottky diode using vacuum annealing at mild temperature in Ar gas ambient. Nickel …
An investigation on barrier inhomogeneities of 4H-SiC Schottky barrier diodes induced by surface morphology and traps
KY Lee, YH Huang - IEEE transactions on electron devices, 2012 - ieeexplore.ieee.org
The correlation between barrier inhomogeneities of 4H-SiC Schottky barrier diodes (SBDs)
and surface defects and traps for SBDs fabricated with and without chemical–mechanical …
and surface defects and traps for SBDs fabricated with and without chemical–mechanical …
Current–voltage–temperature characteristics of Au/p-InP Schottky barrier diode
In order to evaluate current conduction mechanism in the Au/p-InP Schottky barrier diode
(SBD), some electrical parameters such as the barrier height (Φbo) and ideality factor (n) …
(SBD), some electrical parameters such as the barrier height (Φbo) and ideality factor (n) …