Multiphase traction inverters: State-of-the-art review and future trends
Multiphase inverters (MPIs) continue to increase in popularity owing to their compelling
features that include enhanced fault-tolerance capability, improved per-phase power …
features that include enhanced fault-tolerance capability, improved per-phase power …
Gate and base drivers for silicon carbide power transistors: An overview
D Peftitsis, J Rabkowski - IEEE Transactions on Power …, 2015 - ieeexplore.ieee.org
Silicon carbide (SiC) power transistors have started gaining significant importance in various
application areas of power electronics. During the last decade, SiC power transistors were …
application areas of power electronics. During the last decade, SiC power transistors were …
[图书][B] Power electronics for renewable energy systems, transportation and industrial applications
Compiles current research into the analysis and design of power electronic converters for
industrial applications and renewable energy systems, presenting modern and future …
industrial applications and renewable energy systems, presenting modern and future …
An experimental investigation of the tradeoff between switching losses and EMI generation with hard-switched all-Si, Si-SiC, and all-SiC device combinations
Silicon carbide (SiC) switching power devices (MOSFETs, JFETs) of 1200 V rating are now
commercially available, and in conjunction with SiC diodes, they offer substantially reduced …
commercially available, and in conjunction with SiC diodes, they offer substantially reduced …
Silicon carbide power transistors: A new era in power electronics is initiated
During recent years, silicon carbide (SiC) power electronics has gone from being a
promising future technology to being a potent alternative to state-of-the-art silicon (Si) …
promising future technology to being a potent alternative to state-of-the-art silicon (Si) …
Influences of device and circuit mismatches on paralleling silicon carbide MOSFETs
This paper addresses the influences of device and circuit mismatches on paralleling the
silicon carbide (SiC) MOSFETs. Comprehensive theoretical analysis and experimental …
silicon carbide (SiC) MOSFETs. Comprehensive theoretical analysis and experimental …
Short-circuit protection circuits for silicon-carbide power transistors
An experimental analysis of the behavior under short-circuit conditions of three different
silicon-carbide (SiC) 1200-V power devices is presented. It is found that all devices take up …
silicon-carbide (SiC) 1200-V power devices is presented. It is found that all devices take up …
Imbalance current analysis and its suppression methodology for parallel SiC MOSFETs with aid of a differential mode choke
Parallel connection of silicon carbide (SiC) MOSFETs is a cost-effective solution for high-
capacity power converters. However, transient imbalance current, during turn-on and-off …
capacity power converters. However, transient imbalance current, during turn-on and-off …
Effect of asymmetric layout and unequal junction temperature on current sharing of paralleled SiC MOSFETs with kelvin-source connection
C Zhao, L Wang, F Zhang - IEEE Transactions on Power …, 2019 - ieeexplore.ieee.org
Parallel connection of silicon carbide (SiC) mosfets is a popular solution for high-capacity
applications. In order to improve the switching speed of paralleled SiC mosfets, Kelvin …
applications. In order to improve the switching speed of paralleled SiC mosfets, Kelvin …
All-SiC 9.5 kW/dm3 On-Board Power Electronics for 50 kW/85 kHz Automotive IPT System
R Bosshard, JW Kolar - IEEE Journal of Emerging and Selected …, 2016 - ieeexplore.ieee.org
Inductive power transfer (IPT) is widely discussed for the automated opportunity charging of
plug-in hybrid and electric public transport buses without moving mechanical components …
plug-in hybrid and electric public transport buses without moving mechanical components …