Major features of silicon carbide (SiC) power devices include high blocking voltage, low on-
state loss, and fast switching, compared with those of the Si counterparts. Through recent …

Power semiconductor devices are key components in power conversion systems. Silicon
carbide (SiC) has received increasing attention as a wide-bandgap semiconductor suitable …

Wide-bandgap semiconductors are expected to be applied to solid-state lighting and power
devices, supporting a future energy-saving society. While GaN-based white LEDs have …

It is generally believed that the inverted structure is more beneficial for constructing highly
stable organic solar cells (OSCs), but the power conversion efficiency (PCE) of current …

Significant reduction of major deep levels in n-type 4H-SiC (0001) epilayers by means of
thermal oxidation is demonstrated. By thermal oxidation of epilayers at 1150–1300 C, the …

Recent progress in the SiC material and ultrahigh-voltage devices is reviewed. Regarding
the material issues, fast epitaxial growth of high-purity epitaxial layers and reduction of basal …

In the last ten years, large improvements in the epitaxial silicon carbide processes have
been made. The introduction of chloride precursors, the epitaxial growth on large area …

We investigated the dependency of minority carrier lifetimes on the nitrogen concentration,
temperature, and the injected carrier concentration for highly nitrogen-doped 4H-SiC …

The literature on direct conversion of radioisotope energy to electricity is reviewed.
Considerations of the choice of radioisotope, converter, and device design are discussed …

By thermal oxidation of 4H-SiC at 1150–1300 C, the Z 1/2 and EH 6/7 concentrations can be
reduced to below 1× 10 11 cm-3. By the oxidation, however, a high concentration of HK0 …