Results of investigations into surface processes of the formation of germanium and silicon
nanostructures are analyzed. A mechanism of three-dimensional island nucleation and …

Создание полупроводниковых структур с новыми физическими свойствами является
основной задачей нанотехнологии, имеющей целью расширение пределов …

Resonant light scattering properties of dielectric particles are highly sensitive to particle
shapes and optical parameters of particle/substrate systems. To obtain submicron-sized Ge …

The properties of thin Si and SiGe layers grown on SiO 2 by chemical vapor deposition
(CVD) were studied using transmission electron and atomic force microscopies, and Raman …

High density of crystal defects is formed in Si layers during their growth on the
nanostructured surface composed of dense arrays of Ge islands grown on oxidized Si …

We present computational results for strain effects on charge carrier confinement in Ge x Si
1− x quantum dots (QDs) grown on an oxidized Si surface. The strain and free carrier …

Silicon layers grown on oxidized Si surfaces at temperatures between 400 and 500 C exhibit
intense photoluminescence (PL) in the D1 region after annealing at high temperatures (up to …

Dislocation-rich Si layers are grown on a nanostructured surface composed of dense arrays
of Ge islands that are formed on oxidized Si substrates. The p–i–n+ diodes fabricated on the …

We observed strong 1.5 μ m photoluminescence (PL) from Si-capped Ge 1− x Sn x nanodots
on Si (001) substrates formed using ultrathin SiO 2 films. The lack of the quantum size effect …

Ge/Si structures with a layer of Ge islands grown on oxidized Si surfaces and covered with
Si were recently found to exhibit intense photoluminescence (PL) in the D1 region (∼ 0.8 …