Sub-10 nm two-dimensional transistors: Theory and experiment
Presently Si-based field-effect transistors (FETs) are approaching their physical limit, and
further scaling their gate length down to the sub-10 nm region is becoming extremely …
further scaling their gate length down to the sub-10 nm region is becoming extremely …
Electronic structures and theoretical modelling of two-dimensional group-VIB transition metal dichalcogenides
Atomically thin group-VIB transition metal dichalcogenides (TMDs) have recently emerged
as a new class of two-dimensional (2D) semiconductors with extraordinary properties …
as a new class of two-dimensional (2D) semiconductors with extraordinary properties …
k· p theory for two-dimensional transition metal dichalcogenide semiconductors
We presentk p· Hamiltonians parametrized byab initiodensity functional theory calculations
to describe the dispersion of the valence and conduction bands at their extrema (theK, Q, Γ …
to describe the dispersion of the valence and conduction bands at their extrema (theK, Q, Γ …
Shubnikov–de Haas Oscillations of High-Mobility Holes in Monolayer and Bilayer : Landau Level Degeneracy, Effective Mass, and Negative Compressibility
We study the magnetotransport properties of high-mobility holes in monolayer and bilayer
WSe 2, which display well defined Shubnikov–de Haas (SdH) oscillations, and quantum …
WSe 2, which display well defined Shubnikov–de Haas (SdH) oscillations, and quantum …
Hydrothermally synthesized MoS2-multi-walled carbon nanotube composite as a novel room-temperature ammonia sensing platform
MoS 2 and its composite with multi-walled carbon nanotube (MWCNTs) were synthesized
using facile hydrothermal approach. Structural and vibrational analysis revealed the …
using facile hydrothermal approach. Structural and vibrational analysis revealed the …
Ultrafast laser spectroscopy of two‐dimensional materials beyond graphene
F Ceballos, H Zhao - Advanced Functional Materials, 2017 - Wiley Online Library
Starting with the discovery of graphene in 2004, the interest in two‐dimensional materials
since then has been exponentially growing. Across many disciplines, their exceptional …
since then has been exponentially growing. Across many disciplines, their exceptional …
2-D Materials for Ultrascaled Field-Effect Transistors: One Hundred Candidates under the Ab Initio Microscope
Due to their remarkable properties, single-layer 2-D materials appear as excellent
candidates to extend Moore's scaling law beyond the currently manufactured silicon …
candidates to extend Moore's scaling law beyond the currently manufactured silicon …
Enhanced Performance of WS2 Field‐Effect Transistor through Mono and Bilayer h‐BN Tunneling Contacts
NAN Phan, H Noh, J Kim, Y Kim, H Kim, D Whang… - Small, 2022 - Wiley Online Library
Transition metal dichalcogenides (TMDs) are of great interest owing to their unique
properties. However, TMD materials face two major challenges that limit their practical …
properties. However, TMD materials face two major challenges that limit their practical …
Diffusion quantum Monte Carlo study of excitonic complexes in two-dimensional transition-metal dichalcogenides
Excitonic effects play a particularly important role in the optoelectronic behavior of two-
dimensional semiconductors. To facilitate the interpretation of experimental photoabsorption …
dimensional semiconductors. To facilitate the interpretation of experimental photoabsorption …
Even–odd layer-dependent magnetotransport of high-mobility Q-valley electrons in transition metal disulfides
In few-layer transition metal dichalcogenides (TMDCs), the conduction bands along the ΓK
directions shift downward energetically in the presence of interlayer interactions, forming six …
directions shift downward energetically in the presence of interlayer interactions, forming six …