Scalable 3D silicon photonic electronic integrated circuits and their applications

Y Zhang, A Samanta, K Shang… - IEEE Journal of Selected …, 2020 - ieeexplore.ieee.org
This paper investigates the opportunity and challenges of 3D silicon photonic electronic
integrated circuits (3D EPICs) scaling to wafer-scale and beyond. The continuing demand …

Through-silicon via-based capacitor and its application in LDO regulator design

L Qian, K Qian, X He, Z Chu, Y Ye… - IEEE Transactions on …, 2019 - ieeexplore.ieee.org
Using coaxial through-silicon technologies, a new 3-D capacitor integrated on a silicon
interposer is proposed. The capacitance of coaxial through silicon via (CTSV) capacitors is …

Investigating on through glass via based RF passives for 3-D integration

L Qian, J Sang, Y Xia, J Wang… - IEEE Journal of the …, 2018 - ieeexplore.ieee.org
Due to low dielectric loss and low cost, glass is developed as a promising material for
advanced interposers in 2.5-D and 3-D integration. In this paper, through glass vias (TGVs) …

Area-efficient extended 3-D inductor based on TSV technology for RF applications

C Qu, Z Zhu, Y En, L Wang, X Liu - IEEE Transactions on Very …, 2020 - ieeexplore.ieee.org
An extended model of through-silicon via (TSV)-based solenoid inductor is proposed to save
on-chip areas for 3-D radio frequency (RF) ICs and package integration. To achieve a high …

Cu/Co multilayer-based high signal integrity and low RF loss conductors for 5G/millimeter wave applications

S Hwangbo, A Rahimi, YK Yoon - IEEE Transactions on …, 2018 - ieeexplore.ieee.org
This paper presents copper/cobalt (Cu/Co) multilayer-based low RF loss conductors and
their usage in high signal integrity coplanar waveguide (CPW) transmission lines (TLs) and …

Modeling and Measurement of 3D Solenoid Inductor Based on Through-Silicon Vias

X Yin, F Wang, Z Zhu, VF Pavlidis, X Liu… - Chinese Journal of …, 2023 - ieeexplore.ieee.org
Through-silicon via (TSV) provides vertical interconnectivity among the stacked dies in three-
dimensional integrated circuits (3D ICs) and is a promising option to minimize 3D solenoid …

3D TSV based high frequency components for RF IC and RF MEMS applications

M Fernández-Bolaños, WA Vitale… - 2016 IEEE …, 2016 - ieeexplore.ieee.org
We demonstrate and review the unique fine-pitch high-aspect ratio tungsten-filled through-
silicon vias (W-TSVs) technology developed by Fraunhofer EMFT in high-resitivity silicon …

3D photonics as enabling technology for deep 3D DRAM stacking

S Werner, P Fotouhi, X Xiao, M Fariborz… - Proceedings of the …, 2019 - dl.acm.org
3D stacking improves bandwidth, energy, and latency of DRAMs by exploiting shorter and
more abundant wiring in three dimensions. While future stacks are predicted to provide tens …

Ultra-compact, high-performance, 3D-IPD integrated using conformal 3D interconnects

A Ghannam, A Magnani, D Bourrier… - 2018 IEEE 68th …, 2018 - ieeexplore.ieee.org
A 3D technology for fabrication of ultra-compact, high-performance 3D integrated passive
devices (3D-IPD) is presented here. The technology comprises high-Q thin film MIM …

First order Electro-thermal compact models and noise considerations for three-dimensional integration circuits

Y Ma - 2018 - hal.science
Three Dimensional (3D) Integration and Packaging has been successful in mainstream
devices to increase logic density and to reduce data movement distances. It solves the …