High‐Speed Photodetectors on Silicon Photonics Platform for Optical Interconnect
A photodetector (PD) converts optical signals into electrical ones and is widely used in
optical interconnect. High‐speed PDs are in high demand as they are necessary to meet …
optical interconnect. High‐speed PDs are in high demand as they are necessary to meet …
Silicon photonics: from a microresonator perspective
Silicon photonics leverages the optical, electrical and material properties of silicon and the
mature complementary metal‐oxide semiconductor (CMOS) nanofabrication technique to …
mature complementary metal‐oxide semiconductor (CMOS) nanofabrication technique to …
Roadmap on silicon photonics
Silicon photonics research can be dated back to the 1980s. However, the previous decade
has witnessed an explosive growth in the field. Silicon photonics is a disruptive technology …
has witnessed an explosive growth in the field. Silicon photonics is a disruptive technology …
Room-temperature sub-band gap optoelectronic response of hyperdoped silicon
JP Mailoa, AJ Akey, CB Simmons, D Hutchinson… - Nature …, 2014 - nature.com
Room-temperature infrared sub-band gap photoresponse in silicon is of interest for
telecommunications, imaging and solid-state energy conversion. Attempts to induce infrared …
telecommunications, imaging and solid-state energy conversion. Attempts to induce infrared …
Near-infrared sub-bandgap all-silicon photodetectors: state of the art and perspectives
Due to recent breakthroughs, silicon photonics is now the most active discipline within the
field of integrated optics and, at the same time, a present reality with commercial products …
field of integrated optics and, at the same time, a present reality with commercial products …
Plasmonic enhanced silicon pyramids for internal photoemission Schottky detectors in the near-infrared regime
We demonstrate a nanoscale broadband silicon plasmonic Schottky detector with high
responsivity and improved signal to noise ratio operating in the sub-bandgap regime …
responsivity and improved signal to noise ratio operating in the sub-bandgap regime …
Strain modulation in crumpled Si nanomembranes: Light detection beyond the Si absorption limit
Although Si is extensively used in micro-nano electronics, its inherent optical absorption
cutoff at 1100-nm limits its photonic and optoelectronic applications in visible to partly near …
cutoff at 1100-nm limits its photonic and optoelectronic applications in visible to partly near …
State‐of‐the‐art all‐silicon sub‐bandgap photodetectors at telecom and datacom wavelengths
M Casalino, G Coppola, RM De La Rue… - Laser & Photonics …, 2016 - Wiley Online Library
Silicon‐based technologies provide an ideal platform for the monolithic integration of
photonics and microelectronics. In this context, a variety of passive and active silicon …
photonics and microelectronics. In this context, a variety of passive and active silicon …
Breaking the absorption limit of Si toward SWIR wavelength range via strain engineering
Silicon has been widely used in the microelectronics industry. However, its photonic
applications are restricted to visible and partial near-infrared spectral range owing to its …
applications are restricted to visible and partial near-infrared spectral range owing to its …
State-of-the-art photodetectors for optoelectronic integration at telecommunication wavelength
Photodetectors hold a critical position in optoelectronic integrated circuits, and they convert
light into electricity. Over the past decades, high-performance photodetectors (PDs) have …
light into electricity. Over the past decades, high-performance photodetectors (PDs) have …