PCMO RRAM for integrate-and-fire neuron in spiking neural networks
S Lashkare, S Chouhan, T Chavan… - IEEE Electron …, 2018 - ieeexplore.ieee.org
Resistance random access memories (RRAM) or memristors with an analog change of
conductance are widely explored as an artificial synapse, eg, Pr 0.7 Ca 0.3 MnO 3 (PCMO) …
conductance are widely explored as an artificial synapse, eg, Pr 0.7 Ca 0.3 MnO 3 (PCMO) …
Transient joule heating-based oscillator neuron for neuromorphic computing
Oscillatory neural networks (ONNs), based on the thalamocortical neural system, use the
phase dynamics of oscillator neurons to solve NP-hard problems-a key challenge for von …
phase dynamics of oscillator neurons to solve NP-hard problems-a key challenge for von …
Reaction-Drift Model for Switching Transients in Pr₀. ₇Ca₀. ₃MnO₃-Based Resistive RAM
V Saraswat, S Prasad, A Khanna… - … on Electron Devices, 2020 - ieeexplore.ieee.org
Pr0. 7Ca0. 3MnO3 (PCMO)-based resistive RAM (RRAM) shows promising memory
properties like nonvolatility, low variability, multiple resistance states, and scalability. From a …
properties like nonvolatility, low variability, multiple resistance states, and scalability. From a …
Ionic Transport Barrier Tuning by Composition in Pr1–xCaxMnO3-Based Selector-Less RRAM and Its Effect on Memory Performance
P Kumbhare, U Ganguly - IEEE Transactions on Electron …, 2018 - ieeexplore.ieee.org
Selector-less resistive random-access memory (RRAM) devices require high nonlinearity
(NL) in low resistance state current (ILRS). In this paper, we investigate the effect of …
(NL) in low resistance state current (ILRS). In this paper, we investigate the effect of …
Neuromorphic computing systems with emerging devices
The rapid growth of artificial intelligence demands computing hardware with higher
computing power and energy efficiency. Amid the slowdown of Moore's law scaling …
computing power and energy efficiency. Amid the slowdown of Moore's law scaling …
Highly Deterministic One-Shot Set–Reset Programming Scheme in PCMO Resistive Random-Access Memory
O Phadke, V Saraswat, U Ganguly - ACS Applied Electronic …, 2022 - ACS Publications
Resistive random-access memory (RRAM) devices are very versatile with applications
ranging from digital nonvolatile memories to analog synapses and integrate-fire neurons …
ranging from digital nonvolatile memories to analog synapses and integrate-fire neurons …
Temperature Effects in SET/RESET Voltage–Time Dilemma in Pr0.7Ca0.3MnO3-Based RRAM
To understand the voltage-time dilemma in Pr 0.7 Ca 0.3 MnO 3 (PCMO)-based resistive
random access memory, we present switching transient currents for 10 ns-1 s for both SET …
random access memory, we present switching transient currents for 10 ns-1 s for both SET …
Stochasticity invariance control in Pr1− x Ca x MnO3 RRAM to enable large-scale stochastic recurrent neural networks
V Saraswat, U Ganguly - Neuromorphic Computing and …, 2021 - iopscience.iop.org
Emerging non-volatile memories have been proposed for a wide range of applications, from
easing the von-Neumann bottleneck to neuromorphic applications. Specifically, scalable …
easing the von-Neumann bottleneck to neuromorphic applications. Specifically, scalable …
Serialized Stepwise Parameter Calibration Strategy for a Compact Transient Switching Model of PCMO RRAM
PCMO RRAM, a type of non-filamentary bulk switching RRAM demonstrates complex
switching transients from fast (ns) to long (s) time range. A reaction-drift phenomena with self …
switching transients from fast (ns) to long (s) time range. A reaction-drift phenomena with self …