Comprehensive study of 1-bit full adder cells: review, performance comparison and scalability analysis

M Hasan, AH Siddique, AH Mondol, M Hossain… - SN Applied …, 2021 - Springer
Full Adder (FA) circuits are integral components in the design of Arithmetic Logic Units
(ALUs) of modern computing systems. Recently, there have been massive research interests …

[HTML][HTML] Low voltage high performance hybrid full adder

P Kumar, RK Sharma - … Science and Technology, an International Journal, 2016 - Elsevier
This paper presents a low voltage and high performance 1-bit full adder designed with an
efficient internal logic structure that leads to have a reduced Power Delay Product (PDP) …

An energy efficient logic approach to implement CMOS full adder

P Kumar, RK Sharma - Journal of Circuits, systems and Computers, 2017 - World Scientific
An energy efficient internal logic approach for designing two 1-bit full adder cells is
proposed in this work. It is based on decomposition of the full adder logic into the smaller …

[HTML][HTML] Real-time fault tolerant full adder design for critical applications

P Kumar, RK Sharma - … science and technology, an international journal, 2016 - Elsevier
In the complex computing system, processing units are dealing with devices of smaller size,
which are sensitive to the transient faults. A transient fault occurs in a circuit caused by the …

Design and analysis of a new carbon nanotube full adder cell

MH Ghadiry, A Abd Manaf, MT Ahmadi… - Journal of …, 2011 - Wiley Online Library
A novel full adder circuit is presented. The main aim is to reduce power delay product (PDP)
in the presented full adder cell. A new method is used in order to design a full‐swing full …

DLPA: Discrepant low PDP 8-bit adder

M Ghadiry, M Nadi, AK A'Ain - Circuits, Systems, and Signal Processing, 2013 - Springer
This paper presents a new 8-bit adder circuit, called discrepant low PDP 8-bit adder (DLPA)
based on three new full adder cells, which have been designed based on requirements of …

Graphene nanoribbon field-effect transistor at high bias

M Ghadiry, R Ismail, M Saeidmanesh… - Nanoscale research …, 2014 - Springer
Combination of high-mean free path and scaling ability makes graphene nanoribbon (GNR)
attractive for application of field-effect transistors and subject of intense research. Here, we …

A model for length of saturation velocity region in double-gate Graphene nanoribbon transistors

MH Ghadiry, MT Ahmadi, A Abd Manaf - Microelectronics Reliability, 2011 - Elsevier
Length of saturation region (LVSR) as an important parameter in nanoscale devices, which
controls the drain breakdown voltage is in our focus. This paper presents three models for …

Performance Analysis of full adder circuit using Conventional and Hybrid Techniques

D Vaithiyanathan, SM Sonar, JB Parri… - 2021 IEEE Madras …, 2021 - ieeexplore.ieee.org
Adders are widely used in many digital circuits and play an integral role in the
implementation of various logic circuits. From the starting days, efforts are being made to …

Design and Simulation of New High Speed, Low Power D-Flip-Flops, Implemented Using Graphene Nanoribbon and Carbon Nanotube Field Effect Transistors

H Fereidounpour, N Yasrebi, H Pakniat - Iranian Journal of Science and …, 2024 - Springer
Abstract A novel 13-transistor, low-power true single-phase clocked (TSPC) flip-flop design
is proposed which improves clock loading, power consumption, and performance. The …