Analysis of in situ thin films epitaxy by reflectance spectroscopy: effect of growth parameters
I Massoudi, A Rebey - Superlattices and Microstructures, 2019 - Elsevier
In the current work, we provide a theoretical analysis of reflectance spectroscopy response
during the heteroepitaxy of thin films. UV–Vis–NIR energy range is explored for the control of …
during the heteroepitaxy of thin films. UV–Vis–NIR energy range is explored for the control of …
Study of surface roughness using spectral reflectance measurements recorded during the MOVPE of InAs/GaAs heterostructures
InAs layers were elaborated on semi-insulating GaAs (100) substrates in a horizontal
atmospheric pressure MOVPE reactor at a temperature of 450° C. The growth process was …
atmospheric pressure MOVPE reactor at a temperature of 450° C. The growth process was …
Optical and morphological study of misoriented GaAs substrates exposed to bismuth flow using in situ spectral reflectance and atomic force microscopy
(100) GaAs substrates with different misorientations were exposed to trimethyl-bismuth
(TMBi) flow. The wafers were examined after exposure times of 9 and 43 min. The wafers …
(TMBi) flow. The wafers were examined after exposure times of 9 and 43 min. The wafers …
Optical properties study of In. 08Ga. 92As/GaAs using spectral reflectance, photoreflectance and near-infrared Photoluminescence
Optical properties of In. 08Ga. 92As/GaAs structure grown by metalorganic vapor phase
epitaxy have been investigated. Spectral reflectance (SR) and photoreflectance (PR) as well …
epitaxy have been investigated. Spectral reflectance (SR) and photoreflectance (PR) as well …
In Situ Spectral Reflectance Investigation of InAs/GaAs Heterostructures Grown by MOVPE
Metalorganic vapor-phase epitaxy of InAs/GaAs heterostructures was monitored in situ by
spectral reflectance in the wavelength range from 600 nm to 1000 nm. Three-dimensional …
spectral reflectance in the wavelength range from 600 nm to 1000 nm. Three-dimensional …
Structural and optical properties of InxGa1− xAs strained layers grown on GaAs substrates by MOVPE
MM Habchi, N Tounsi, M Bedoui, I Zaied… - Physica E: Low …, 2014 - Elsevier
Abstract In x Ga 1− x As/GaAs pseudomorphic structures were grown by metalorganic vapor
phase epitaxy. Reciprocal space mapping were recorded in the vicinity of (0 0 4) and (1 1 5) …
phase epitaxy. Reciprocal space mapping were recorded in the vicinity of (0 0 4) and (1 1 5) …
MOVPE growth of InAsBi/InAs/GaAs heterostructure analyzed by in situ spectral reflectance
InAsBi/InAs heterostructures were elaborated on semi-insulating GaAs substrate by
atmospheric pressure metalorganic vapor phase epitaxy. Spectral reflectance in the range of …
atmospheric pressure metalorganic vapor phase epitaxy. Spectral reflectance in the range of …
Optical properties study of InxGa1− xAs/GaAs structures using spectral reflectance, photoreflectance and near-infrared photoluminescence
MM Habchi, M Bedoui, N Tounsi, I Zaied… - Superlattices and …, 2014 - Elsevier
Optical properties of In x Ga 1− x As films grown on GaAs substrates by metalorganic vapor
phase epitaxy were investigated. Spectral reflectance (SR) and photoreflectance (PR) at …
phase epitaxy were investigated. Spectral reflectance (SR) and photoreflectance (PR) at …
Analysis of the VIS–NIR spectral reflectance of Bi/GaAs structures grown by MOVPE and UHVE
Bismuth films have been deposited onto (001) GaAs substrates by metal organic vapor
phase epitaxy and ultra-high vacuum evaporation. The optical and morphological properties …
phase epitaxy and ultra-high vacuum evaporation. The optical and morphological properties …
Оптический мониторинг параметров технологических процессов в условиях металлоорганической газофазной эпитаксии
ПВ Волков, АВ Горюнов, ВМ Данильцев… - Поверхность …, 2008 - elibrary.ru
Впервые продемонстрированы возможности низкокогерентной тандемной
интерферометрии для оптического мониторинга температуры полупроводниковой …
интерферометрии для оптического мониторинга температуры полупроводниковой …