Since 2010, vacuum‐processed oxide semiconductors have greatly improved with the
publication of more than 1,300 related papers. Although the number of researches on oxide …

Research on a replacement of amorphous silicon for a thin-film transistor (TFT) and large
area electronics has been driven by costly vacuum processed indium-gallium-zinc oxide …

We report the numerical simulation of the effect of a dual gate (DG) TFT structure operating
under dual gate driving on improving negative bias illumination stress (NBIS) of amorphous …

In the past few years, there has been growing interest in ultraviolet (UV) photodetectors for
various applications. A key requirement for UV photodetectors is the ability to exclusively …

We fabricate an operational amplifier (op-amp) composed with the coplanar amorphous
indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). The circuit consisted of 19 …

We propose a way to achieve high-speed circuits with dual-gate (DG) bulk-accumulation
back-channeletched (BCE) amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film …

We report the effect of purification of ZrO x precursor on the performance of solution
processed amorphous indium-zinc-tin oxide thin-film transistors with a ZrO x gate insulator …

We report a novel emission gate driver using low-temperature poly-Si oxide (LTPO) thin-film
transistors (TFTs). The proposed circuit consists of eight p-type low-temperature poly-Si …

We report the design and fabrication of a high-speed and ultranarrow pitch gate driver with
amorphous indium-gallium-zinc-oxide thin-film transistors (a-IGZO TFTs). At a supply voltage …

We report the achievement of flexible oxide thin-film transistors (TFTs) that are highly robust
under mechanical bending stress. Fabricated on solution-processed polyimide, the oxide …