Scalable fabrication of metallic nanogaps at the sub‐10 nm level

S Luo, BH Hoff, SA Maier, JC de Mello - Advanced Science, 2021 - Wiley Online Library
Metallic nanogaps with metal–metal separations of less than 10 nm have many applications
in nanoscale photonics and electronics. However, their fabrication remains a considerable …

Ultrahigh energy storage capacity in multilayer-structured cellulose-based dielectric capacitors caused by interfacial polarization-coupled Schottky barrier height

Z Sun, J Liu, H Wei, Q Guo, Y Bai, S Zhao… - Journal of Materials …, 2023 - pubs.rsc.org
Polymer-based dielectric capacitors, which have two main branches of PVDF-based and PI-
based systems, show the advantages of ease of processing and good energy storage …

Contribution of polymers to electronic memory devices and applications

S Lee, S Kim, H Yoo - Polymers, 2021 - mdpi.com
Electronic memory devices, such as memristors, charge trap memory, and floating-gate
memory, have been developed over the last decade. The use of polymers in electronic …

Utilizing the synergistic effect between the Schottky barrier and field redistribution to achieve high-density, low-consumption, cellulose-based flexible dielectric films for …

Z Sun, H Wei, S Zhao, Q Guo, Y Bai, S Wang… - Journal of Materials …, 2024 - pubs.rsc.org
After decades of development, the study of flexible dielectric materials has changed the
focus from BOPP/PVDF/PI-based systems to those that can be biodegraded, not only …

[HTML][HTML] Rapid and up-scalable manufacturing of gigahertz nanogap diodes

K Loganathan, H Faber, E Yengel, A Seitkhan… - Nature …, 2022 - nature.com
The massive deployment of fifth generation and internet of things technologies requires
precise and high-throughput fabrication techniques for the mass production of radio …

Massively Parallel Arrays of Size‐Controlled Metallic Nanogaps with Gap‐Widths Down to the Sub‐3‐nm Level

S Luo, A Mancini, R Berté, BH Hoff, SA Maier… - Advanced …, 2021 - Wiley Online Library
Metallic nanogaps (MNGs) are fundamental components of nanoscale photonic and
electronic devices. However, the lack of reproducible, high‐yield fabrication methods with …

Bipolar resistive switching in junctions of gallium oxide and p-type silicon

MN Almadhoun, M Speckbacher, BC Olsen… - Nano Letters, 2021 - ACS Publications
In this work, native GaO x is positioned between bulk gallium and degenerately doped p-
type silicon (p+-Si) to form Ga/GaO x/SiO x/p+-Si junctions. These junctions show memristive …

Mechanical Nanoscale Polarization Control in Ferroelectric PVDF‐TrFE Films

R Roth, MM Koch, AD Rata… - Advanced Electronic …, 2022 - Wiley Online Library
Ferroelectric polymer films offer strong advantages like mechanical flexibility,
biocompatibility, optical transparency, and low‐cost processing. However, their dielectric or …

Crossbar array of artificial synapses based on ferroelectric diodes

L Seufert, M HassanpourAmiri… - Advanced Electronic …, 2021 - Wiley Online Library
Two terminal devices that exhibit resistance switching in response to an external voltage are
interesting for neuromorphic computing applications. Owing to its simple device structure, a …

Recent advances, perspectives, and challenges in ferroelectric synapses

BB Tian, N Zhong, CG Duan - Chinese Physics B, 2020 - iopscience.iop.org
The multiple ferroelectric polarization tuned by external electric field could be used to
simulate the biological synaptic weight. Ferroelectric synaptic devices have two advantages …